TM GD2X30MPS12N 1200V 60A SiC Schottky MPS Diode Silicon Carbide Schottky Diode VRRM = 1200 V F (T = 134C) I C = 60 A * QC = 194 nC * Features Package Gen4 Thin Chip Technology for Low V F A A Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F RoHS Low Thermal Resistance Low Reverse Leakage Current Temperature Independent Fast Switching Posivti e Temperature Coe cient of V F SOT-227 REACH K K High dV/dt Ruggedness Advantages Applicaonsti Improved System E ciency Power Factor Correction (PFC) High System Reliability Electric Vehicles and Battery Chargers Optimal P rice Performance Solar Inverters Reduced Cooling Requirements High Frequency Converters Increased System Power Density Switched Mode Power Supply (SMPS) Zero Reverse Recovery Current Motor Drives Easy to Parallel without Thermal Runaway Anti-P arallel / Free-Wheeling Diode Enables Extremely Fast Switching Inducon Hti eating & Welding Absolute Maximum Rangsti (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage (Per Leg) V 1200 V RRM TC = 75C, D = 1 52 / 104 Continuous Forward Current (Per Leg / Per Device) I T = 100C, D = 1 44 / 88 A Fig. 4 F C T = 134C, D = 1 30 / 60 C T = 25C, t = 10 ms 300 Non-Repetitive Peak Forward Surge Current, Half Sine C P I A F,SM Wave (Per Leg) T = 150C, t = 10 ms 240 C P Repetitive Peak Forward Surge Current, Half Sine Wave TC = 25C, tP = 10 ms 180 I A F,RM (Per Leg) TC = 150C, tP = 10 ms 126 Non-Repetitive Peak Forward Surge Current (Per Leg) I T = 25C, t = 10 s 1500 A F,MAX C P 2 2 2 i t Value (Per Leg) i dt T = 25C, t = 10 ms 450 A s C P Non-Repetitive Avalanche Energy (Per Leg) EAS L = 0.7 mH, IAS = 30 A 325 mJ Diode Ruggedness (Per Leg) dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation (Per Leg / Per Device) P T = 25C 211 / 422 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C * Per Device Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GD2X30MPS12N/GD2X30MPS12N.pdf Page 1 of 7TM GD2X30MPS12N 1200V 60A SiC Schottky MPS Diode Electrical Characteristics (Per Leg) Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 30 A, T = 25C 1.5 1.8 F j Diode Forward Voltage VF V Fig. 1 I = 30 A, T = 175C 1.9 F j V = 1200 V, T = 25C 2 10 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 20 R j VR = 400 V 67 Total Capacitive Charge Q nC Fig. 7 C V = 800 V 97 R IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 1101 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 64 Thermal/Package Characteriscsti Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.71 C/W Fig. 9 thJC (Per Leg) Weight W 28.0 g T Mounting Torque T Screws to Heatsink 1.5 Nm M Terminal Connection Torque TC M4 Screws 1.3 Nm t = 1s (50/60 Hz) 3000 Isolation Voltage(RMS) V V ISO t = 60s (50/60 Hz) 2500 d Terminal to Terminal 10.5 Ctt Creepage Distance on Surface mm d Terminal to Backside 8.5 Ctb dStt Terminal to Terminal 3.2 Striking Distance Through Air mm dStb Terminal to Backside 6.8 Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GD2X30MPS12N/GD2X30MPS12N.pdf Page 2 of 7