TM GD2X30MPS06N 650V 60A SiC Schottky MPS Diode Silicon Carbide Schottky Diode VRRM = 650 V F (T = 116C) I C = 60 A * QC = 92 nC * Features Package Gen4 Thin Chip Technology for Low V F A A Superior Power E ciency Superior Figure of Merit Q /I C F RoHS Enhanced Surge Current Robustness Low Thermal Resistance Temperature Independent Fast Switching Positive Temperature Coe cient of V F SOT-227 REACH K K High dV/dt Ruggedness Advantages Applicaonsti Opmal Pti rice Performance Power Factor Correcon (PFti C) Improved System E ciency Electric Vehicles and Battery Chargers Reduced Cooling Requirements Solar Inverters Increased System Power Density High Frequency Converters Zero Reverse Recovery Current Switched Mode Power Supply (SMPS) High System Reliability Motor Drives Easy to Parallel without Thermal Runaway An-Pti arallel / Free-Wheeling Diode Enables Extremely Fast Switching Inducon Hti eating & Welding Absolute Maximum Ratings (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage (Per Leg) V 650 V RRM TC = 75C, D = 1 42 / 84 Continuous Forward Current (Per Leg / Per Device) I T = 100C, D = 1 35 / 70 A Fig. 4 F C T = 116C, D = 1 30 / 60 C T = 25C, t = 10 ms 210 Non-Repetitive Peak Forward Surge Current, Half Sine C P I A F,SM Wave (Per Leg) T = 150C, t = 10 ms 168 C P Repetitive Peak Forward Surge Current, Half Sine Wave TC = 25C, tP = 10 ms 126 I A F,RM (Per Leg) TC = 150C, tP = 10 ms 89 Non-Repetitive Peak Forward Surge Current (Per Leg) I T = 25C, t = 10 s 1050 A F,MAX C P 2 2 2 i t Value (Per Leg) i dt T = 25C, t = 10 ms 220 A s C P Non-Repetitive Avalanche Energy (Per Leg) EAS L = 0.6 mH, IAS = 30 A 276 mJ Diode Ruggedness (Per Leg) dV/dt V = 0 ~ 520 V 200 V/ns R Power Dissipation (Per Leg / Per Device) P T = 25C 136 / 272 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C * Per Device Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GD2X30MPS06N/GD2X30MPS06N.pdf Page 1 of 7TM GD2X30MPS06N 650V 60A SiC Schottky MPS Diode Electrical Characteristics (Per Leg) Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 30 A, T = 25C 1.5 1.8 F j Diode Forward Voltage VF V Fig. 1 I = 30 A, T = 175C 1.8 F j V = 650 V, T = 25C 1 5 R j Reverse Current I A Fig. 2 R V = 650 V, T = 175C 6 R j VR = 200 V 31 Total Capacitive Charge Q nC Fig. 7 C V = 400 V 46 R IF IF,MAX dI /dt = 200 A/s F V = 200 V R Switching Time tS < 10 ns V = 400 V R VR = 1 V, f = 1MHz 735 Total Capacitance C pF Fig. 6 VR = 400 V, f = 1MHz 63 Thermal/Package Characteriscsti Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 1.1 C/W Fig. 9 thJC (Per Leg) Weight W 28.0 g T Mounting Torque T Screws to Heatsink 1.5 Nm M Terminal Connection Torque TC M4 Screws 1.3 Nm t = 1s (50/60 Hz) 3000 Isolation Voltage(RMS) V V ISO t = 60s (50/60 Hz) 2500 d Terminal to Terminal 10.5 Ctt Creepage Distance on Surface mm d Terminal to Backside 8.5 Ctb dStt Terminal to Terminal 3.2 Striking Distance Through Air mm dStb Terminal to Backside 6.8 Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GD2X30MPS06N/GD2X30MPS06N.pdf Page 2 of 7