Product Information

GBU4G

GBU4G electronic component of GeneSiC Semiconductor

Datasheet
Bridge Rectifiers 400V 4A Bridge Rectifier

Manufacturer: GeneSiC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.1429 ea
Line Total: USD 2.14

2756 - Global Stock
Ships to you between
Fri. 17 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3197 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

GBU4G
GeneSiC Semiconductor

1 : USD 1.4145
10 : USD 0.9913
25 : USD 0.8705
100 : USD 0.7118
250 : USD 0.6371
500 : USD 0.5831
1000 : USD 0.5301
2500 : USD 0.4715
5000 : USD 0.4715

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Termination Style
If - Forward Current
Peak Reverse Voltage
Vf - Forward Voltage
Max Surge Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Ir - Reverse Current
Brand
Maximum Reverse Leakage Current
Maximum Rms Reverse Voltage
Factory Pack Quantity :
Product
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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GBU4A thru GBU4G V = 50 V - 400 V RRM Single Phase Glass Passivated I = 4 A O Silicon Bridge Rectifier Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High case dielectric strength of 1500 V RMS Glass passivated chip junction GBU Package Ideal for printed circuit boards High surge overload rating High temperature soldering guaranteed: 260C/ 10 seconds, 0.375 (9.5mm) lead length Not ESD Sensitive Mechanical Data Case: Molded plastic body over passivated junctions Terminals: Plated leads, solderable per MIL-STD-750 Method 2026. Mounting position: Any Maximum ratings at Tc = 25 C, unless otherwise specified Conditions GBU4D GBU4G Parameter Symbol GBU4A GBU4B Unit V 200 400 Repetitive peak reverse voltage 50 100 V RRM RMS reverse voltage V 35 70 140 280 V RMS V DC blocking voltage 50 100 200 400 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics at Tc = 25 C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Conditions GBU4A GBU4B GBU4D GBU4G Unit Maximum average forward rectified I T = 100 C 4.0 4.0 c 4.0 4.0 A O 1,2 current I t = 8.3 ms, half sine 150 150 Peak forward surge current p 150 150 A FSM Maximum instantaneous forward V I = 4 A 1.1 1.1 1.1 1.1 V F F voltage drop per leg T = 25 C 5 5 5 5 Maximum DC reverse current at a I A R rated DC blocking voltage per leg T = 125 C 500 500 500 500 a 2 2 I t A sec Rating for fusing t < 8.3 ms 93 93 93 93 Typical junction capacitance per C 100 100 100 100 pF j 3 leg R 22 22 22 22 JA 1,2 Typical thermal resistance per leg R 4.2 4.2 4.2 4.2 C/W JL 1 - Device mounted on 40 mm x 40 mm x 1.5 mm Al plate heatsink 2 - Recommended mounted position is to bolt down device on a heatsink with silicon thermal compond for maximum heat transfer using 6 screw. 3 - Measured at 1.0 MHz and applied reverse bias of 4.0 V 1 Oct. 2018 GBU4A thru GBU4G 2 Oct. 2018

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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