Product Information

GB05SLT12-220

GB05SLT12-220 electronic component of GeneSiC Semiconductor

Datasheet
GeneSiC Semiconductor Schottky Diodes & Rectifiers 1200V 5A SiC Schottky Rectifier

Manufacturer: GeneSiC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1250: USD 5.7241 ea
Line Total: USD 7155.12

0 - Global Stock
MOQ: 1250  Multiples: 1250
Pack Size: 1250
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1250
Multiples : 1250

Stock Image

GB05SLT12-220
GeneSiC Semiconductor

1250 : USD 5.6005
2500 : USD 5.6005
5000 : USD 5.382

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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GB05SLT12-220 Silicon Carbide Power V = 1200 V RRM Schottky Diode I = 12 A F (Tc = 25C) Q = 21 nC C Features Package 1200 V Schottky rectifier RoHS Compliant 175 C maximum operating temperature case Temperature independent switching behavior PIN 1 Superior surge current capability CASE PIN 2 Positive temperature coefficient of V F Extremely fast switching speeds 2 Superior figure of merit Q /I C F 1 TO 220AC Advantages Applications Improved circuit efficiency (Lower overall cost) Power Factor Correction (PFC) Low switching losses Switched-Mode Power Supply (SMPS) Ease of paralleling devices without thermal runaway Solar Inverters Smaller heat sink requirements Wind Turbine Inverters Low reverse recovery current Motor Drives Low device capacitance Induction Heating Low reverse leakage current at operating temperature Uninterruptible Power Supply (UPS) High Voltage Multipliers Maximum Ratings at T = 175 C, unless otherwise specified j Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V 1200 V RRM T 155 C Continuous forward current I 5 A F C T 155 C RMS forward current I C 8 A F(RMS) T = 25 C, t = 10 ms Surge non-repetitive forward current, Half Sine C P 32 I A F,SM Wave T = 155 C, t = 10 ms 26 C P Non-repetitive peak forward current I T = 25 C, t = 10 s 120 A F,max C P T = 25 C, t = 10 ms 5 2 2 C P 2 I t value i dt As T = 155 C, t = 10 ms 3.4 C P Power dissipation P T = 25 C 117 W tot C Operating and storage temperature T , T -55 to 175 C j stg Electrical Characteristics at T = 175 C, unless otherwise specified j Values Parameter Symbol Conditions Unit min. typ. max. I = 5 A, T = 25 C 1.6 1.9 F j Diode forward voltage V V F I = 5 A, T = 175 C 2.6 3.0 F j V = 1200 V, T = 25 C R j 5 50 Reverse current I A R V = 1200 V, T = 175 C R j 10 100 V = 400 V R 21 Total capacitive charge Q nC C I I F F,MAX V = 960 V 35 R dI /dt = 200 A/ s F V = 400 V R T = 175 C j Switching time t < 25 ns s V = 960 V R V = 1 V, f = 1 MHz, T = 25 C 260 R j Total capacitance C V = 400 V, f = 1 MHz, T = 25 C 25 pF R j V = 1000 V, f = 1 MHz, T = 25 C R j 20 Thermal Characteristics Thermal resistance, junction - case R 1.4 C/W thJC Mechanical Properties Mounting torque M 0.6 Nm Aug 2014 GB05SLT12-220 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 4: Current Derating Curves (D = t /T, t = 400 s) P P Figure 3: Power Derating Curve (Considering worst case Z conditions ) th Figure 5: Typical Junction Capacitance vs Reverse Voltage Figure 6: Typical Switching Energy vs Reverse Voltage Characteristics Characteristics Aug 2014

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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