Product Information

FS8205

Name: FS8205
Brand: Fortune
SKU: FS8205_Fortune
Availability: OutOfStock
Rating: 5 (11 reviews)

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Datasheet

MOSFET 2 N Channel (Dual) 20V 6A 1.2V @ 250uA 28 mÎ© @ 4A,4.5V SOT-23-6 RoHS

Manufacturer: Fortune

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.2515 ea
Line Total: USD 1.26

0 - Global Stock

MOQ: 5 Multiples: 5
Pack Size: 5

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 27 May to Thu. 30 May MOQ : 5 Multiples : 5 FS8205 Fortune	5 : USD 0.2153 50 : USD 0.1717 150 : USD 0.1503 500 : USD 0.1143 3000 : USD 0.1092 6000 : USD 0.1061

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Additional Infomation About Product

SemiconductorThe FS8205 MOSFET 2 N Channel (Dual) 20V 6A 1.2V @ 250uA 28 mÎ© @ 4A,4.5V SOT-23-6 RoHS manufactured by Fortune Semiconductor is a dual N-channel MOSFET. It has a drain voltage of 20V and a drain current of 6A. It has a peak voltage of 1.2V at 250uA and a maximum on-state resistance of 28 mÎ© at 4A, 4.5V. It is packaged in a SOT-23-6 RoHS package and is manufactured using RoHS compliant processes. This allows for reliable, energy-efficient performance. It is ideal for a wide range of applications, such as switching circuits, motor control, load switching, power management, and battery management.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Fortune may also be referenced as

Fortune Semicon

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Manufacturer Fortune Fortune
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package SOT - 23 - 6 SOT - 23 - 6
Brand Category Fortune Fortune
Fet Type 2 n channel(dual) 2 n channel(dual)
Drain To Source Voltagevdss 20 V 20 V
Continuous Drain Current Id @ 25°C 6 A 6 A
Vgsth Max @ Id 1.2 V @ 250ua 1.2 V @ 250ua
Rds On Max @ Id Vgs 28 m @ 4a,4.5v 28 m @ 4a,4.5v
Power Dissipation-Max Ta 1 W 1 W
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 6 A 6 A
Drain Source On Resistance Rdson@Vgs Id 28 mOhms @4.5V , 4A 28 mOhms @4.5V , 4A
Power Dissipation Pd 1 W 1 W
Gate Threshold Voltage Vgsth@Id 1.2 V @250uA 1.2 V @250uA
Type 2 N - Channel 2 N - Channel