Product Information

MR256DL08BMA45R

MR256DL08BMA45R electronic component of Everspin

Datasheet
MRAM 256Kb, 2.7V 32K x 8 45ns Parallel MRAM

Manufacturer: Everspin
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 8.2869 ea
Line Total: USD 16573.8

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 2000
Multiples : 2000
2000 : USD 7.3485
4000 : USD 7.3485

     
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MR256DL08B Dual Supply 32K x 8 MRAM FEATURES 3.3 Volt V power supply with a range of 2.7V to 3.6V DD I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces Fast 45 ns read/write cycle SRAM compatible timing Unlimited read & write endurance Data always non-volatile for >20-years at temperature All products meet MSL-3 moisture sensitivity level RoHS-compliant small footprint BGA package BENEFITS One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems RoHS for simpler, more efficient designs Improves reliability by replacing battery-backed SRAM INTRODUCTION The MR256DL08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR256DL08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256DL08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR256DL08B is available in small footprint 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. The MR256DL08B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature (0 to +70 C). CONTENTS 1. DEVICE PIN ASSIGNMENT......................................................................... 2 2. ELECTRICAL SPECIFICATIONS................................................................. 4 3. TIMING SPECIFICATIONS.......................................................................... 8 4. ORDERING INFORMATION....................................................................... 13 5. MECHANICAL DRAWING.......................................................................... 14 6. REVISION HISTORY...................................................................................... 15 How to Reach Us.......................................................................................... 15 Copyright Everspin Technologies 2018 1 MR256DL08B Rev.2.3 3/2018MR256DL08B 1. DEVICE PIN ASSIGNMENT Figure 1.1 Block Diagram OUTPUT G ENABLE OUTPUT ENABLE BUFFER 7 A 14:0 ADDRESS 8 ROW BUFFER COLUMN 15 DECODER DECODER CHIP E 8 8 8 OUTPUT ENABLE SENSE BUFFER BUFFER AMPS 32K x 8 BIT MEMORY WRITE W ARRAY ENABLE FINAL BUFFER 8 8 WRITE 8 WRITE DQ 7:0 DRIVER DRIVERS WRITE ENABLE Table 1.1 Pin Functions Signal Name Function A Address Input E Chip Enable W Write Enable G Output Enable DQ Data I/O V Power Supply DD V I/O Power Supply DDQ V Ground SS DC Do Not Connect NC No Connection, Ball D3, H1, H6, G2 Reserved for Future Expansion Copyright Everspin Technologies 2018 2 MR256DL08B Rev.2.3 3/2018

Tariff Desc

8542.32.00 33 No ..Memory cards (other than "smart" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Everspin Tech
Everspin Technologies

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