Product Information

MR4A16BCMA35

MR4A16BCMA35 electronic component of Everspin

Datasheet
MRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM

Manufacturer: Everspin
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 46.975 ea
Line Total: USD 46.975

91 - Global Stock
Ships to you between
Thu. 04 Apr to Wed. 10 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
269 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1

Stock Image

MR4A16BCMA35
Everspin

1 : USD 49.309
3 : USD 49.309
5 : USD 49.309
10 : USD 49.309
20 : USD 49.309

202 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

MR4A16BCMA35
Everspin

1 : USD 56.1315
10 : USD 52.8655
25 : USD 50.7265
50 : USD 46.3335
100 : USD 46.3335
240 : USD 46.3335
480 : USD 46.3335
1200 : USD 46.3335

91 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1

Stock Image

MR4A16BCMA35
Everspin

1 : USD 46.975
10 : USD 46.5125
25 : USD 46.05
40 : USD 45.129

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Interface Type
Memory Size
Organisation
Data Bus Width
Access Time
Supply Voltage - Min
Supply Voltage - Max
Operating Supply Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Mounting Style
Factory Pack Quantity :
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MR4A16B 1M x 16 MRAM FEATURES +3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Unlimited read & write endurance Data always non-volatile for >20 years at temperature RoHS-compliant small footprint BGA and TSOP2 package All products meet MSL-3 moisture sensitivity level BENEFITS One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs Improves reliability by replacing battery-backed SRAM INTRODUCTION The MR4A16B is a 16,777,216-bit magnetoresistive random access memory RoHS (MRAM) device organized as 1,048,576 words of 16 bits. The MR4A16B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automatically pro- tected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. To simplify fault tolerant design, the MR4A16B includes internal single bit error correction code with 7 ECC parity bits for every 64 data bits. The MR4A16B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR4A16B is available in a small footprint 48-pin ball grid array (BGA) package and a 54-pin thin small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM products and other nonvolatile RAM products. The MR4A16B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature (0 to +70 C), and industrial temperature (-40 to +85 C) operating temperature options. CONTENTS 1. DEVICE PIN ASSIGNMENT......................................................................... 3 2. ELECTRICAL SPECIFICATIONS................................................................. 4 3. TIMING SPECIFICATIONS.......................................................................... 7 4. ORDERING INFORMATION....................................................................... 12 5. MECHANICAL DRAWING.......................................................................... 13 6. REVISION HISTORY...................................................................................... 15 How to Reach Us.............................................................................................. 16 Copyright 2018 Everspin Technologies, Inc. 1 MR4A16B Rev. 11.7 3/2018MR4A16B 1. DEVICE PIN ASSIGNMENT Figure 1.1 Block Diagram OUTPUT UPPER BYTE OUTPUT ENABLE G ENABLE BUFFER LOWER BYTE OUTPUT ENABLE 10 UPPER A 19:0 ADDRESS 8 BYTE 10 ROW BUFFER COLUMN 20 OUTPUT DECODER 8 DECODER BUFFER SENSE CHIP E LOWER AMPS 8 16 ENABLE BYTE 8 OUTPUT BUFFER 1M x 16 BUFFER BIT UPPER MEMORY 8 BYTE WRITE DQU 15:8 W 8 ARRAY WRITE ENABLE DRIVER FINAL BUFFER 16 WRITE 8 LOWER DRIVERS 8 BYTE DQL 7:0 WRITE UB DRIVER UB UPPER BYTE WRITE ENABLE BYTE ENABLE LB LB BUFFER LOWER BYTE WRITE ENABLE Table 1.1 Pin Functions Signal Name Function A Address Input E Chip Enable W Write Enable G Output Enable UB Upper Byte Enable LB Lower Byte Enable DQ Data I/O V Power Supply DD V Ground SS DC Do Not Connect NC No Connection Copyright 2018 Everspin Technologies, Inc. 2 MR4A16B Rev. 11.7 3/2018

Tariff Desc

8542.32.00 33 No ..Memory cards (other than "smart" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Everspin Tech
Everspin Technologies

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