DIM400GDM33-F000 Dual Switch IGBT Module Replaces DS5616-3 DS5616-4 January 2018 (LN35023) FEATURES KEY PARAMETERS 10s Short Circuit Withstand V 3300V CES V * (typ) 2.8V CE(sat) High Thermal Cycling Capability I (max) 400A C Soft Punch Through Silicon I (max) 800A C(PK) Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals Lead Free construction 1(E1) 2(C) APPLICATIONS 1 2 7(E ) High Reliability Inverters 10(C ) Motor Controllers 1 6(G ) 2 Traction Drives 9(G ) Choppers 1 2 The Powerline range of high power modules includes 5(C ) 8(E ) half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 3(C1) 4(E2) 6500V and currents up to 2400A. The DIM400GDM33-F000 is a single switch 3300V, n- channel enhancement mode, insulated gate bipolar Fig. 1 Circuit configuration transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10s short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM400GDM33-F000 Outline type code: G Note: When ordering, please use the complete part (See Fig. 11 for further information) number Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 1/8 www.dynexsemi.com DIM400GDM33-F000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. T = 25C unless stated otherwise case Symbol Parameter Test Conditions Max. Units V Collector-emitter voltage V = 0V 3300 V CES GE V Gate-emitter voltage 20 V GES I Continuous collector current T = 90C 400 A C case I Peak collector current 1ms, T = 115C 800 A C(PK) case P Max. transistor power dissipation T = 25C, T = 150C 5.2 kW max case j 2 2 2 I t Diode I t value V = 0, t = 10ms, T = 125C 80 kA s R p j Commoned terminals to base plate. V * Isolation voltage per module 6000 V isol AC RMS, 1 min, 50Hz Q Partial discharge per module IEC1287, V = 3500V, V = 2600V, 50Hz RMS 10 pC PD 1 2 THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 33mm Clearance: 20mm CTI (Comparative Tracking Index): >600 Symbol Parameter Test Conditions Min Typ. Max Units Continuous dissipation - R Thermal resistance transistor - - 24 C/kW th(j-c) junction to case Continuous dissipation - R Thermal resistance diode - - 48 C/kW th(j-c) junction to case Thermal resistance Mounting torque 5Nm R - - 8 C/kW th(c-h) case to heatsink (per module) (with mounting grease) Transistor - - 125 C T Junction temperature j Diode - - 125 C T Storage temperature range - -40 - 125 C stg Mounting M6 - - 5 Nm Screw torque Electrical connections M4 - - 2 Nm Electrical connections M8 - - 10 Nm 2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com