Product Information

PI3USB10MZEEX

PI3USB10MZEEX electronic component of Diodes Incorporated

Datasheet
Analog Multiplexer Dual 2:1 12-Pin TDFN EP T/R

Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

PI3USB10MZEEX
Diodes Incorporated

1 : USD 0.7521
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

PI3USB10MZEEX
Diodes Incorporated

1 : USD 4.158
10 : USD 1.47
100 : USD 1.1554
500 : USD 0.9841
1000 : USD 0.7547
2000 : USD 0.7207
N/A

Obsolete
0 - Global Stock

MOQ : 13
Multiples : 1

Stock Image

PI3USB10MZEEX
Diodes Incorporated

13 : USD 0.7521
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On Resistance - Max
Supply Voltage - Min
Supply Voltage - Max
Number of Switches
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Package / Case
Packaging
Product
Configuration
On Time - Max
Off Time - Max
Operating Supply Voltage
Bandwidth
Height
Length
Width
Brand
Operating Supply Current
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Switch Continuous Current
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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PI3USB10M 4.2V, Wide Bandwidth, 2-Channel, 2:1 Mux/DeMux USB 2.0 Switch w/ Single Select Features Description USB 2.0 compliant The PI3USB10M is a single differential channel 2:1 multiplexer/ demultiplexer USB 2.0 Switch. Industry leading advantages in- R is 4 typical ON clude a propagation delay of less than 250ps, resulting from its low Low bit-to-bit skew channel resistance and I/O capacitance. The device multiplexes Low Crosstalk: -31dB 250 MHz differential outputs from a USB Host device to one of two cor- responding outputs. The switch is bidirectional and offers little Near-Zero propagation delay: 250ps or no attenuation of the high-speed signals at the outputs. It is Switching speed: 9ns designed for low bit-to-bit skew, high channel-to-channel noise Channel On Capacitance: 6pF (typical) isolation and is compatible with various standards, such as High Speed USB 2.0 (480 Mb/s). V Operating Range: 2.7V to 5.0V DD ESD >2000V . Human Body Model >700 MHz bandwidth (or data frequency) Packaging (Pb-free & Green): Pin Description (ZK12) 12-contact, 1.6mm x 2.2mm, TQFN (ZK12) 12-contact, 3mm x 3.5mm, TDFN (ZE12) Application 1 12 I 1 0 V 2 11 DD Routes signals for USB 2.0 I 0 1 Y 3 10 0 I 1 1 Y 4 9 1 Hand held devices GND GND 5 8 6 7 Block Diagram I Pin Description (ZE12) Y 0 0 0 Y 1 I 1 0 I 0 1 I 1 1 GND 1 I 12 0 0 V 2 I SEL DD 11 1 0 Y 3 I 0 10 0 1 Y 4 I 1 9 1 1 GND 5 V 8 DD SEL 6 GND 7 Truth Table Function SEL Y to I L n n o Y to I H n n 1 PS8799F 11/02/07 07-0242 1 SEL GND V I DD 0 0 PI3USB10M 4.2V, Wide Bandwidth, 2-Channel, 2:1 Mux/DeMux USB 2.0 Switch with Single Select Maximum Ratings (Above which useful life may be impaired. For user guidelines, not tested.) Storage Temperature ......................................................65C to +150C Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This Supply Voltage to Ground Potential ...............................0.5V to +5.25V is a stress rating only and functional operation of the device DC Input Voltage ..............................................................0.5V to +5.5V at these or any other conditions above those indicated in the DC Output Current ........................................................................ 120mA operational sections of this speci cation is not implied. Ex- posure to absolute maximum rating conditions for extended Power Dissipation ............................................................................. 0.5W periods may affect reliability. DC Electrical Characteristics for USB 2.0 Switching over Operating Range (T = 40C to +85C, V = 3.0V 4.4V) A DD (1) (2) Parameter Description Test Conditions Min. Typ. Max. Units V = 4.2V 2.0 Guaranteed DD V Input HIGH Voltage IH HIGH level V = 3.3V 1.6 DD V V Input LOW Voltage Guaranteed HIGH level 0.8 IL V Clamp Diode Voltage V = Max., I = 18mA -0.7 -1.2 IK DD IN I Input HIGH Current V = Max., V = V 5 IH DD IN DD A I Input LOW Current V = Max., V = GND 5 IL DD IN V = Min., 1.25V V V DD IN DD, (3) R Switch On-Resistance 4.0 6.5 ON I = 40mA IN V = Min., V 1.5V and DD IN (3) R On-Resistance Flatness 1.0 FLAT(ON) V I = -40mA DD IN On-Resistance match from cen- V = Min., 1.5V V V , DD IN DD R 0.9 2.0 ON (3) ter ports to any other port I = -40mA IN Notes: 1. For max. or min. conditions, use appropriate value speci ed under Electrical Characteristics for the applicable device type. 2. V = 3.0 - 4.4V, T = 25C ambient and maximum loading. DD A 3. Measured by the voltage drop between Y and In pin at indicated current through the Switch-On-Resistance is determined by the lower of the voltages on the two (Y, In) pins. Power Supply Characteristics (V = 3.0 - 4.4V) DD (1) Parameters Description Test Conditions Min. Typ. Max. Units I Quiescent Power Supply Current V = Max., V = GND or V 800 A DD DD IN DD Notes: 1. For max. or min. conditions, use appropriate value speci ed under Electrical Characteristics for the applicable device type. 07-0242 PS8799F 11/02/07 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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