Product Information

DAGNH2001200

DAGNH2001200 electronic component of DACO SEMICONDUCTOR

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic:200A
Manufacturer: DACO SEMICONDUCTOR
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 100.8606 ea
Line Total: USD 100.86

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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DAGNH2001200
DACO SEMICONDUCTOR

1 : USD 103.964

Read More Specifications

     
Manufacturer
Product Category
Power Dissipation
Case
Semiconductor Structure
Topology
Electrical Mounting
Mounting
Type Of Module
Pulsed Collector Current
Max. Off-State Voltage
Collector Current
Gate-Emitter Voltage
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Additional Infomation About Product

The DAGNH2001200 IGBT module from DACO SEMICONDUCTOR is a half-bridge, insulated-gate-bipolar-transistor (IGBT) module providing 200A of continuous current at 600V. It features an integrated NPT Trench IGBT technology, low switching losses, and over-temperature and over-current protection. The device is designed to be used in applications requiring power switching with low loss, such as AC and DC motor drives, Uninterruptible Power Supplies and many more.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DACO SEMICONDUCTOR may also be referenced as

DACO SEMICONDUCTOR
DACO SEMICONDUCTOR CO

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