Product Information

DAGNH1501200

DAGNH1501200 electronic component of DACO SEMICONDUCTOR

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic:150A
Manufacturer: DACO SEMICONDUCTOR
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 80.2837 ea
Line Total: USD 80.28

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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DAGNH1501200
DACO SEMICONDUCTOR

1 : USD 82.754

Read More Specifications

     
Manufacturer
Product Category
Power Dissipation
Case
Semiconductor Structure
Topology
Electrical Mounting
Mounting
Type Of Module
Pulsed Collector Current
Max. Off-State Voltage
Collector Current
Gate-Emitter Voltage
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Additional Infomation About Product

The DAGNH1501200 module is a type of IGBT (Insulated Gate Bipolar Transistor) half bridge manufactured by DACO Semiconductor. This module is specially designed to provide a maximum continuous current of 150A and a power dissipation of 301W at 25°C. It consists of a pair of alternating IGBTs, which are switched two times higher than the typical transistor pair frequency to enhance its power efficiency. Additionally, this module can operate from -40°C to +125°C and also features over-current protection with a current limit of up to 710A. Its integrated components help reduce the system noise and increase the system's reliability. All in all, the DAGNH1501200 module is ideal for a wide range of applications such as motor drive, solar power inverter, lighting power supply, and induction heating.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DACO SEMICONDUCTOR may also be referenced as

DACO SEMICONDUCTOR
DACO SEMICONDUCTOR CO

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