Product Information

2N6045

2N6045 electronic component of Central Semiconductor

Datasheet
Transistors Darlington NPN Darl SW

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.3945 ea
Line Total: USD 2.39

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

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2N6045
Central Semiconductor

1 : USD 2.3945
10 : USD 2.0354
25 : USD 1.9143
100 : USD 1.6477
500 : USD 1.3376
1000 : USD 1.1491

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Power Dissipation
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN www.centralsemi.com COMPLEMENTARY SILICON POWER DESCRIPTION: DARLINGTON TRANSISTORS The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE 2N6040 2N6041 2N6042 MAXIMUM RATINGS: (T =25C) SYMBOL 2N6043 2N6044 2N6045 UNITS C Collector-Base Voltage V 60 80 100 V CBO Collector-Emitter Voltage V 60 80 100 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 8.0 A C Peak Collector Current I 16 A CM Base Current I 120 mA B Power Dissipation P 75 W D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 1.67 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 20 A CBO CB CBO I V =Rated V , V=1.5V 20 A CEV CE CEO BE(OFF) I V =Rated V , V =1.5V, T=150C 200 A CEV CE CEO BE(OFF) C I V =Rated V 20 A CEO CE CEO I V=5.0V 2.0 mA EBO EB BV I =100mA (2N6040, 2N6043) 60 V CEO C BV I =100mA (2N6041, 2N6044) 80 V CEO C BV I =100mA (2N6042, 2N6045) 100 V CEO C V I =4.0A, I =16mA (2N6040, 2N6041, 2N6043, 2N6044) 2.0 V CE(SAT) C B V I =3.0A, I =12mA (2N6042, 2N6045) 2.0 V CE(SAT) C B V I =8.0A, I=80mA 4.0 V CE(SAT) C B V I =8.0A, I=80mA 4.5 V BE(SAT) C B V V =4.0V, I=4.0A 2.8 V BE(ON) CE C h V =4.0V, I =4.0A (2N6040, 2N6041, 2N6043, 2N6044) 1,000 20,000 FE CE C h V =4.0V, I =3.0A (2N6042, 2N6045) 1,000 20,000 FE CE C h V =4.0V, I=8.0A 100 FE CE C R1 (16-November 2009)2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS h V =4.0V, I =3.0A, f=1.0kHz 300 fe CE C f V =4.0V, I =3.0A, f=1.0MHz 4.0 MHz T CE C C V =10V, I =0, f=100kHz (NPN Types) 200 pF ob CB E C V =10V, I =0, f=100kHz (PNP Types) 300 pF ob CB E TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING: FULL PART NUMBER R1 (16-November 2009) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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