TIP137

TIP132 TIP135 TIP137 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The TIP132 is a silicon Epitaxial-Base NPN TO-220 power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP137 . Also TIP135 is a PNP type. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 5 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP132 PNP TIP135 TIP137 V Collector-Base Voltage (I = 0) 60 100 V CBO E V Collector-Emitter Voltage (I = 0) 60 100 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 8 A C I Collector Peak Current 12 A CM I Base Current 0.3 A B o Ptot Total Dissipation at T 25 C 70 W case o 2 W T 25 C amb o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j * For PNP types voltage and current values are negative. 1/4 October 1999TIP132 / TIP135 / TIP137 THERMAL DATA o R Thermal Resistance Junction-case Max 1.78 C/W thj-case o R Thermal Resistance Junction-ambient Max 63.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = Half Rated V 0.5 mA CEO CE CEO Current (I = 0) B I Collector Cut-off V = Rated V 0.2 mA CBO CB CBO Current (IE = 0) I Emitter Cut-off Current V = 5 V 5 mA EBO EB (I = 0) C V * Collector-Emitter I = 30 mA CEO(sus) C Sustaining Voltage for TIP135 60 V (I = 0) for TIP132/TIP137 100 V B V * Collector-Emitter I = 4 A I = 16 mA 2 V CE(sat) C B Saturation Voltage I = 6 A I = 30 mA 4 V C B V * Base-Emitter Voltage I = 4 A V = 4 V 2.5 V BE C CE hFE* DC Current Gain IC = 1 A VCE = 4 V 500 I = 4 A V = 4 V 1000 15000 C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Areas Power Derating Curve 2/4