USA BeO TE949311 SA01 SA01, SA01-6 SA01 SA01-6SA01 SA01-6 Pulse Width Modulation Amplifier FEATURES SINGLE SUPPLY OPERATION WIDE SUPPLY RANGE 16-100V 20A CONTINUOUS OUTPUT PROGRAMMABLE CURRENT LIMIT SHUTDOWN CONTROL HERMETIC PACKAGE 2 2 IN FOOTPRINT APPLICATIONS 10-PIN POWER DIP BRUSH TYPE MOTOR CONTROL PEL TIER CONTROL PACKAGE STYLE DE REACTIVE LOADS TYPICAL APPLICATION MAGNETIC COILS (MRI) ACTIVE MAGNETIC BEARING VIBRATION CANCELLING 3 7 DESCRIPTION EA +V S OUT +V The SA01 amplifier is a pulse width modulation amplifier that IN IN 1 can supply 2KW to the load. The full bridge output amplifier A 6 can be operated from a single power supply over a wide range 7.5V OUT EA 5 of voltages. An error amplifier is included which can provide REF C1 PWM M T gain for the velocity control loop in brush type motor control .1F 2 B applications. Current limit is programmable by a single resistor. +IN 9 OUT SHDN/ A shutdown input turns off all four drivers of the H bridge output. I GND SA01 FILTER SENSE A precision reference output is provided for use in offsetting 10 8 4 the error amplifier. The error amplifier can then be scaled for R standard input signals. The amplifier is protected from shorts to FILTER R LIMIT supply or ground. The H bridge output MOSFETs are protected C FILTER SHUT from thermal overloads by directly sensing the temperature of DOWN the die. The 10-pin hermetic power package occupies only 2 Motor Driver With Tach Feedback square inches of board space and is isolated. BLOCK DIAGRAM +V S 7 7.5V REF OUT EXTERNAL CONNECTIONS 5 SUP/ OUTPUT REF C FILTER DRIVERS B OUT 9 PWM 3 6 A OUT EA OUT IN 1 10 CURRENT SHDN/ R LIMIT FILTER FILTER AND I +IN 2 9 8 SENSE SHUTDOWN IN 1 + B OUT CONTROL SHDN/ 10 ERROR TOP EA OUT 3 8 FILTER AMP I VIEW +IN 2 SENSE GND 4 7 +V S GND 4 REF 5 6 A OUT .1F AS EA OUT (3) GOES MORE POSITIVE, HIGH STATE OF A OUT (6) R C1 LIMIT INCREASES AND HIGH STATE OF B OUT (9) DECREASES2 R = LIMIT I LIMIT Copyright Apex Microtechnology, Inc. 2012 OCT 2012 SA01U www.apexanalog.com 1 (All Rights Reserved) SA01U REVKSA01 SA01-6 SUPPLY VOLTAGE, +V 100V ABSOLUTE MAXIMUM RATINGS S OUTPUT CURRENT, peak 30A 1 POWER DISSIPATION, internal 185W TEMPERATURE, pin solder - 10s 350C 2 TEMPERATURE, junction 150C TEMPERATURE, storage 65 to +150C OPERATING TEMPERATURE RANGE, case 55 to +125C SHUTDOWN VOLTAGE 10V REFERENCE LOAD CURRENT 10mA ERROR AMP INPUT 0 to +12V SPECIFICATIONS SA01 SA01-6 2 PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS ERROR AMP OFFSET VOLTAGE, initial T = 25C 10 * mV C 5 OFFSET VOLTAGE, vs. temperature Full Temperature Range 50 50 V/C BIAS CURRENT, initial T = 25C 5 * A C 5 BIAS CURRENT, vs. temperature Full Temperature Range 400 400 nA/C OFFSET CURRENT, initial T = 25C 1 * A C 5 OFFSET CURRENT, vs. temperature Full Temperature Range 80 80 nA/C 4 COMMON MODE VOLTAGE RANGE 2 8 * * V 4 COMMON MODE REJECTION, DC 75 * dB SLEW RATE 15 * V/S 4 OPEN LOOP GAIN 75 * dB GAIN BANDWIDTH PRODUCT 2 * MHz OUTPUT TOTAL R .25 * ON EFFICIENCY, 10A OUTPUT V = 100V 97 * % S 5 SWITCHING FREQUENCY Full temperature range 35.3 42 48.7 35 42 49 KHz 4 CURRENT, continuous 20 * A 4 CURRENT, peak 30 * A REFERENCE VOLTAGE I = 5mA 7.46 7.50 7.54 * * * V REF 5 VOLTAGE VS. TEMP Full temperature range 50 50 PPM/C OUTPUT CURRENT 5 5 mA 4 LOAD REGULATION 20 50 * * PPM/mA LINE REGULATION 1 * PPM/V POWER SUPPLY 5 VOLTAGE Full temperature range 16 50 100 16 50 100 V CURRENT I = 0, I = 0, 76 90 76 93 mA OUT REF 5 Full temperature range CURRENT, shutdown I = 0 25 * mA REF SHUTDOWN TRIP POINT .18 .22 * * V INPUT CURRENT 100 * nA 2 THERMAL 4 RESISTANCE, junction to case Full temp range, for each transistor 1.0 * C/W 4 RESISTANCE, junction to air Full temperature range 12 * C/W 5 TEMPERATURE RANGE, case Meets full range specifications 25 +85 55 125 C NOTES: 1. Each of the two active output transistors can dissipate 125W, however the N-channel will be about 1/3 of the total dissipated power. Internal connection resistance is .05. 2. Unless otherwise noted: T = 25C. C 3. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to achieve high MTTF. For guidance, refer to the heatsink data sheet. 4. Guaranteed but not tested. 5. Full temperature range specifications apply to the operating case temperature range as specified under THERMAL. For the SA01 these specifications are guaranteed but not tested. For the SA01-6 these specifications are tested over the SA01-6 operating case temperature range. The SA01 is constructed from MOSFET transistors. ESD handling procedures must be observed. CAUTION The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or subject to temperatures in excess of 850C to avoid generating toxic fumes. 2 SA01U