AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology V T 700V DS j,max Low R DS(ON) I 40A DM Low Ciss and Crss R < 0.7 DS(ON),max High Current Capability Q 26nC g,typ RoHS and Halogen Free Compliant E 400V 3.5J oss Applications 100% UIS Tested 100% R Tested g General Lighting for LED and CCFL AC/DC Power supplies for Industrial, Consumer, and Telecom Top View TO-263 D 2 TO-220 TO-220F D PAK D D S S G S D D G G G S AOT10T60P AOTF10T60P AOB10T60P Orderable Part Number Package Type Form Minimum Order Quantity AAOOTT1100TT6600PPLL TTOO--222200 GGrreeeenn TTuubbee 11000000 AOB10T60PL TO-263 Green Tape & Reel 800 AOTF10T60P TO-220F Pb Free Tube 1000 AOTF10T60PL TO-220F Green Tube 1000 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol AOT(B)10T60P AOTF10T60P AOTF10T60PL Units Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS T =25C 10 10* 10* C Continuous Drain I D T =100C A Current 6.6 6.6* 6.6* C C Pulsed Drain Current I 40 DM C Avalanche Current L=1mH I 10 A AR C Repetitive avalanche energy E 50 mJ AR G Single pulsed avalanche energy E 480 mJ AS MOSFET dv/dt ruggedness 50 dv/dt V/ns J Peak diode recovery dv/dt 15 T =25C 208 43 33 W C P B D Power Dissipation Derate above 25C 1.7 0.3 0.26 W/C Junction and Storage Temperature Range T , T -55 to 150 C J STG Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds T 300 C L Thermal Characteristics Parameter Symbol AOT(B)10T60P AOTF10T60P AOTF10T60PL Units A,D R Maximum Junction-to-Ambient JA 65 65 65 C/W A R Maximum Case-to-sink 0.5 -- -- C/W CS Maximum Junction-to-Case R 0.6 2.9 3.8 C/W JC * Drain current limited by maximum junction temperature. Rev.2.0: March 2014 www.aosmd.com Page 1 of 7 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 600 D GS J BV Drain-Source Breakdown Voltage V DSS I =250A, V =0V, T =150C 700 D GS J BV Breakdown Voltage Temperature DSS o I =250A, V =0V 0.56 D GS V/ C Coefficient /TJ V =600V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS V =480V, T =125C 10 DS J I Gate-Body leakage current V =0V, V =30V 100 nA DS GS GSS V V =5V I =250A Gate Threshold Voltage 3 4.3 5 V GS(th) DS , D R Static Drain-Source On-Resistance V =10V, I =5A 0.58 0.7 DS(ON) GS D V =40V, I =5A g Forward Transconductance 8.8 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.74 1 V SD S GS I Maximum Body-Diode Continuous Current 10 A S C I Maximum Body-Diode Pulsed Current 40 A SM DYNAMIC PARAMETERS C Input Capacitance 1595 pF iss V =0V, V =100V, f=1MHz GS DS C Output Capacitance 56 pF oss Effective output capacitance, energy C 42 pF o(er) H related V =0V, V =0 to 480V, f=1MHz GS DS Effective output capacitance, time C 74 pF o(tr) I related C Reverse Transfer Capacitance V =0V, V =100V, f=1MHz 11 pF GS DS rss R Gate resistance f=1MHz 1.7 g SWITCHING PARAMETERS Q Total Gate Charge 26 40 nC g V =10V, V =480V, I =10A Q Gate Source Charge 8.1 nC ggss GS DS D Q Gate Drain Charge 8.2 nC gd t Turn-On DelayTime 42 ns D(on) V =10V, V =300V, I =10A, t Turn-On Rise Time 54 ns r GS DS D R =25 t Turn-Off DelayTime 52 ns G D(off) t Turn-Off Fall Time 24 ns f t I =10A,dI/dt=100A/s,V =100V rr Body Diode Reverse Recovery Time F DS 497 ns Q I =10A,dI/dt=100A/s,V =100V C rr Body Diode Reverse Recovery Charge F DS 7.3 A. The value of R is measured with the device in a still air environment with T =25 C. JA A B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C, Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =4A, V =150V, R =25, Starting T =25 C. AS DD G J H. C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS (BR)DSS. I. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V o(tr) oss DS (BR)DSS. J. I I , di/dt200A/s, V =400V, T T . SD D DD J J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: March 2014 www.aosmd.com Page 2 of 7