AOT470/AOB470L 75V N-Channel MOSFET General Description Product Summary V The AOT470/AOB470L uses advanced trench technology DS 75V and design to provide excellent R with low gate DS(ON) I (at V =10V) 100A D GS charge. This device is suitable for use in PWM, load R (at V =10V) < 10.5m DS(ON) GS switching and general purpose applications. 100% UIS Tested 100% R Tested g TO-263 TO220 2 D PAK Top View Bottom View D Top View Bottom View D D D D G S S G G S D D G G S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 75 V DS Gate-Source Voltage V 25 V GS T =25C 100 Continuous Drain C I D G T =100C Current 78 A C C Pulsed Drain Current I 200 DM T =25C 10 A Continuous Drain I A DSM Current T =70C 8 A C Avalanche Current I , I 45 A AS AR C Avalanche energy L=0.3mH E , E 300 mJ AS AR T =25C 268 C P W D B Power Dissipation T =100C 134 C T =25C 2.1 A P W DSM A Power Dissipation T =70C 1.3 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 10 12 C/W R A D JA Maximum Junction-to-Ambient Steady-State 45 60 C/W Maximum Junction-to-Case Steady-State R 0.45 0.56 C/W JC Rev2: Mar 2012 www.aosmd.com Page 1 of 6 AOT470/AOB470L Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 75 V D GS DSS V =75V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V = 25V 1 A GSS DS GS V V =V , I =250A Gate Threshold Voltage 2 2.7 4 V GS(th) DS GS D I On state drain current V =10V, V =5V 200 A GS DS D(ON) V =10V, I =30A 8.3 10.5 GS D m TO220 T =125C 13.7 17 J R Static Drain-Source On-Resistance DS(ON) V =10V, I =30A GS D TO263 8 10.2 m g Forward Transconductance V =5V, I =30A 90 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 100 A S DYNAMIC PARAMETERS C Input Capacitance 3760 4700 5640 pF iss V =0V, V =30V, f=1MHz C Output Capacitance 280 400 520 pF oss GS DS C Reverse Transfer Capacitance 110 180 250 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.5 3 4.5 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 114 136 nC g V =10V, V =30V, I =30A Q Gate Source Charge 33 40 nC gs GS DS D Q Gate Drain Charge 18 25 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 2211 nnss DD((oonn)) t Turn-On Rise Time V =10V, V =30V, R =1, 39 ns r GS DS L R =3 t Turn-Off DelayTime 70 ns D(off) GEN t Turn-Off Fall Time 24 ns f t I =30A, dI/dt=100A/s 37 rr Body Diode Reverse Recovery Time F 53 70 ns Q I =30A, dI/dt=100A/s 100 nC rr Body Diode Reverse Recovery Charge F 143 185 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175 C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev2: Mar 2012 www.aosmd.com Page 2 of 6