AON7400A 30V N-Channel MOSFET General Description Product Summary V 30V The AON7400A combines advanced trench MOSFET DS technology with a low resistance package to provide I (at V =10V) 40A D GS extremely low R . This device is suitable for use as a DS(ON) R (at V =10V) < 7.5m DS(ON) GS high side switch in SMPS and general purpose R (at V = 4.5V) < 10.5m DS(ON) GS applications. RoHS and Halogen-Free Compliant 100% UIS Tested 100% R Tested g DFN 3x3 EP D Top View Bottom View Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3300 VV DDSS Gate-Source Voltage V 20 V GS T =25C Continuous Drain 40 C I D G Current T =100C 28 A C C Pulsed Drain Current I 100 DM T =25C 15 A Continuous Drain I A DSM Current T =70C 12 A C Avalanche Current I , I 27 A AS AR C Avalanche energy L=0.1mH E , E 36 mJ AS AR T =25C 25 C P W D B Power Dissipation T =100C 10 C T =25C 3.1 A P W DSM A T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 30 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 60 75 C/W Maximum Junction-to-Case Steady-State R 4.2 5 C/W JC Rev 4.0: August 2014 www.aosmd.com Page 1 of 6 AON7400A Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.5 1.97 2.5 V GS(th) DS GS D I On state drain current V =10V, V =5V 100 A GS DS D(ON) V =10V, I =20A 6.2 7.5 GS D m R Static Drain-Source On-Resistance T =125C 9.4 11.3 DS(ON) J V =4.5V, I =20A 8.4 10.5 m GS D g Forward Transconductance V =5V, I =20A 55 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V S GS SD I Maximum Body-Diode Continuous Current 30 A S DYNAMIC PARAMETERS C Input Capacitance 920 1150 1380 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 125 180 235 pF oss GS DS C Reverse Transfer Capacitance 60 105 150 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.55 1.1 1.65 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 16 20 24 nC g Q (4.5V) Total Gate Charge 7.6 9.5 11.4 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 2 2.7 3.2 nC gs Q Gate Drain Charge 3 5 7 nC gd t Turn-On DelayTime 6.5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1155VV,, RR ==00..7755,, 22 nnss r GS DS L R =3 t Turn-Off DelayTime 17 ns GEN D(off) t Turn-Off Fall Time 3.5 ns f t I =20A, dI/dt=500A/s 7 rr Body Diode Reverse Recovery Time F 8.7 10.5 ns Q I =20A, dI/dt=500A/s 11 nC rr Body Diode Reverse Recovery Charge F 13.5 16 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150 C. The value in any given DSM JA application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4.0: August 2014 www.aosmd.com Page 2 of 6