AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD488 uses advanced trench technology and V (V) = 40V DS design to provide excellent R with low gate I = 20 A (V = 10V) DS(ON) D GS charge. This device is suitable for use in PWM, load R < 26 m (V = 10V) DS(ON) GS switching and general purpose applications. R < 39 m (V = 4.5V) DS(ON) GS -RoHS Compliant 100% UIS Tested -Halogen Free* 100% Rg Tested TO252 DPAK D Top View Bottom View D D G S S G S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 40 V DS Gate-Source Voltage V 20 V GS T =25C 20 C Continuous Drain Current T =100C I 23 A C D C Pulsed Drain Current I 50 DM C Avalanche Current I 12 A AR C Repetitive avalanche energy L=0.3mH E 22 mJ AR T =25C 50 C P W D B T =100C Power Dissipation 25 C T =25C 2 A P W DSM A Power Dissipation T =70C 1.3 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 17.4 30 C/W R JA A Steady-State Maximum Junction-to-Ambient 50 60 C/W B Steady-State Maximum Junction-to-Case R 2.3 3 C/W JC Alpha & Omega Semiconductor, Ltd. www.aosmd.comAOD488 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =10mA, V =0V 40 45 V D GS DSS V =32V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 0.1 uA GSS DS GS V Gate Threshold Voltage V =V , I =250A 1 2.3 3 V GS(th) DS GS D I On state drain current V =10V, V =5V 50 A GS DS D(ON) V =10V, I =20A 21.5 26 GS D m R Static Drain-Source On-Resistance T =125C 34 41 DS(ON) J V =4.5V, I =8A 31 39 m GS D g Forward Transconductance V =5V, I =20A 25 S FS DS D V Diode Forward Voltage I =1A, V =0V 0.76 1 V S GS SD I Maximum Body-Diode Continuous Current 20 A S DYNAMIC PARAMETERS C Input Capacitance 404 500 pF iss C Output Capacitance V =0V, V =20V, f=1MHz 95 pF GS DS oss C Reverse Transfer Capacitance 37 pF rss V =0V, V =0V, f=1MHz R Gate resistance 2.7 4 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 9.2 12 nC g Q (4.5V) Total Gate Charge 4.5 nC g V =10V, V =20V, I =20A GS DS D Q Gate Source Charge 1.6 nC gs Q Gate Drain Charge 2.6 nC gd t Turn-On DelayTime 3.5 ns D(on) V =10V, V =20V, R =1.0, t Turn-On Rise Time 6 ns r GS DS L t Turn-Off DelayTime R =3 13.2 ns GEN D(off) t Turn-Off Fall Time 3.5 ns f t I =20A, dI/dt=100A/s 22.9 rr Body Diode Reverse Recovery Time F ns Q I =20A, dI/dt=100A/s 18.3 nC rr Body Diode Reverse Recovery Charge F A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The A Power dissipation P is based on R and the maximum allowed junction temperature of 150C. The value in any given application depends DSM thJA on the user s specific board design, and the maximum temperature of 175C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev3: July 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com