AO4924 Asymmetric Dual N-Channel MOSFET TM SRFET General Description Product Summary The AO4924 uses advanced trench technology to FET1 FET2 provide excellent R and low gate charge. The V (V) = 30V V (V) = 30V DS(ON) DS DS two MOSFETs make a compact and efficient switch I = 9A I =7.3A (V = 10V) D D GS and synchronous rectifier combination for use in DC- R < 15.8m <24m (V = 10V) DS(ON) GS DC converters. A monolithically integrated Schottky R < 19.5m <29m (V = 4.5V) DS(ON) GS diode in parallel with the synchronous MOSFET to boost efficiency further. 100% UIS Tested 100% Rg Tested SOIC-8 TM D1 D2 Top View Bottom View SRFET Soft Recovery MOSFET: Top View Integrated Schottky Diode S1 1 8 D1 G1 D1 2 7 S2 3 6 D2 G2 4 5 D2 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max FET1 Max FET2 Units Drain-Source Voltage V 30 30 V DS Gate-Source Voltage V 12 12 V GS T =25C Continuous Drain 9.0 7.3 A A A Current T =70C I 7.2 5.9 A DSM B Pulsed Drain Current I 40 40 DM B Avalanche Current I 16 12 A AR B Repetitive avalanche energy L=0.3mH E 38 22 mJ AR T =25C 2.0 2.0 A P W DSM Power Dissipation T =70C 1.3 1.3 A Junction and Storage Temperature Range T , T -55 to 150 -55 to 150 C J STG Thermal Characteristics FET1 Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 48 62.5 C/W R JA A Maximum Junction-to-Ambient Steady-State 74 90 C/W C Steady-State R 32 40 C/W Maximum Junction-to-Lead JL Thermal Characteristics FET2 Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 48 62.5 C/W R JA A Steady-State Maximum Junction-to-Ambient 74 90 C/W C Steady-State Maximum Junction-to-Lead R 32 40 C/W JL Alpha & Omega Semiconductor, Ltd.AO4924 FET1 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =1mA, V =0V 30 V D GS DSS V =24V, V =0V 0.01 0.1 DS GS I Zero Gate Voltage Drain Current mA DSS T =125C 5 10 J V =0V, V = 12V I Gate-Body leakage current 0.1 A GSS DS GS V V =V I =250A 1.5 1.85 2.4 V Gate Threshold Voltage GS(th) DS GS D I On state drain current V =4.5V, V =5V 40 A GS DS D(ON) V =10V, I =9A 13 15.8 GS D m R Static Drain-Source On-Resistance T =125C 20.0 25.0 DS(ON) J V =4.5V, I =7A 15.7 19.5 m GS D g Forward Transconductance V =5V, I =9A 64 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.4 0.6 V S GS SD I Maximum Body-Diode + Schottky Continuous Current 4.5 A S DYNAMIC PARAMETERS C Input Capacitance 1450 1885 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 224 pF GS DS oss C Reverse Transfer Capacitance 92 pF rss V =0V, V =0V, f=1MHz R Gate resistance 1.6 3 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 24.0 31 g Q (4.5V) Total Gate Charge 12.0 nC g V =10V, V =15V, I =9A GS DS D Q Gate Source Charge 3.9 nC gs Q Gate Drain Charge 4.2 nC gd t Turn-On DelayTime 5.5 ns D(on) V =10V, V =15V, R =1.7, t Turn-On Rise Time 4.7 ns r GS DS L t Turn-Off DelayTime R =3 24.0 ns GEN D(off) t Turn-Off Fall Time 4.0 ns f t I =9A, dI/dt=300A/s 10 rr Body Diode Reverse Recovery Time F 13 ns Q I =9A, dI/dt=300A/s 6.8 nC rr Body Diode Reverse Recovery Charge F A: The value of R is measured with the device in a still air environment with T =25C. The power dissipation P and current rating I JA A DSM DSM are based on T =150C, using t 10s junction-to-ambient thermal resistance. (J(MAX) B: Repetitive rating, pulse width limited by junction temperature T =150C. J(MAX) C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. Rev2: May 2011 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd.