Product Information

DD260N12K-K

DD260N12K-K electronic component of Infineon

Datasheet
Infineon Technologies Discrete Semiconductor Modules Rectifier Diode Module 1200V 260A

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

DD260N12K-K
Infineon

1 : USD 171.801
5 : USD 169.2684
10 : USD 169.2684
25 : USD 169.2684
100 : USD 169.2432
250 : USD 161.0784
N/A

Obsolete
     
Manufacturer
Product Category
Vf - Forward Voltage
Vr - Reverse Voltage
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
If - Forward Current
Product Type
Subcategory
Taric
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Datenblatt / Data sheet Netz-Dioden-Modul DD260N Rectifier Diode Module Key Parameters V / V 1200V - 1800 V DRM RRM I 260 A (T =100 C) TAVM C I 9500 A TSM V 0,70 V T0 r 0,68 m T R 0,164 K/W thJC Base plate 50 mm For type designation please refer to actual short form catalog Datenblatt / Data sheet Netz-Dioden-Modul DD260N Rectifier Diode Module DD260N Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1200 1400 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM 1600 1800 V repetitive peak reverse voltages 1300 1500 V Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 1900 V non-repetitive peak reverse voltage 410 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current Dauergrenzstrom T = 100C I 260 A C FAVM average on-state current 9500 A Stostrom-Grenzwert T = 25C, t = 10ms I vj P FSM 8300 A surge current T = T , t = 10ms vj vj max P Grenzlastintegral T = 25C, t = 10ms It 451000 As vj P 344000 As It-value T = T , t = 10ms vj vj max P Charakteristische Werte / Characteristic values max. 1,32 V Durchlaspannung T = T , i = 800A v vj vj max F F on-state voltage T = T V max. 0,70 V Schleusenspannung vj vj max (TO) threshold voltage m max. 0 , 68 Ersatzwiderstand T = T r vj vj max T slope resistance T = T , v = V i max. 30 mA Sperrstrom vj vj max R RRM R reverse current Isolations-Prfspannung RMS, f = 50Hz, t = 1 sec V 3,6 kV ISOL insulation test voltage RMS, f = 50Hz, t = 1 min 3,0 kV Thermische Eigenschaften / Thermal properties Innerer Wrmewiderstand pro Modul / per Module, = 180 sin R max. 0,085 K/W thJC pro Zweig / per arm, = 180 sin max. 0,170 K/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,082 K/W pro Zweig / per arm, DC max. 0,164 K/W bergangs-Wrmewiderstand pro Modul / per Module R max. 0,02 K/W thCH max. 0,04 K/W thermal resistance, case to heatsink pro Zweig / per arm 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T - 40...+150 C c op operating temperature T - 40...+150 C Lagertemperatur stg storage temperature HR date of publication: 2018-07-30 prepared by: revision: 3.2 approved by: ML Date of Publication 2018-07-30 Revision 3.2 Seite/page 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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