Product Information

PD85035C

Name: PD85035C
Brand: STMicroelectronics
SKU: PD85035C_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD85035C electronic component of STMicroelectronics

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Datasheet

RF MOSFET Transistors RF Power Trans. LDMOST family

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 69.9008 ea
Line Total: USD 3495.04

0 - Global Stock

MOQ: 50 Multiples: 50
Pack Size: 50

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 50 Multiples : 50 PD85035C STMicroelectronics	50 : USD 69.9008

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Additional Infomation About Product

PD85035C RF power transistor, LdmoST family Features Excellent thermal stability Common source configuration P = 35 W with 14.5 dB gain 945 MHz / OUT 13.6 V BeO-free ceramic package ESD protection In compliance with the 2002/95/EC european directive M243 Epoxy sealed Description Figure 1. Pin connection The PD85035C is a common source N-channel, enhancement-mode lateral Field- Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. 1 PD85035C boasts the excellent gain, linearity and reliability of STs latest LDMOS technology. PD85035Cs superior linearity performance 3 makes it an ideal solution for car mobile radio. 2 1. Drain 2. Gate 3. Source Table 1. Device summary Part number Package Packaging PD85035C M243 Box July 2009 Doc ID14138 Rev 2 1/11 www.st.com 11 Contents PD85035C Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 3 Impedance . 5 4 Typical performance . 6 5 Package mechanical data . 8 6 Revision history . 10 2/11 Doc ID14138 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 8 A 8 A
Vds - Drain-Source Breakdown Voltage 40 V 40 V
Operating Frequency 1 GHz 1 GHz
Gain 14.5 Db At 945 Mhz 14.5 Db At 945 Mhz
Output Power 35 W 35 W
Configuration Single Single
Pd - Power Dissipation 108 W 108 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case M243 M243
Packaging Bulk Bulk
Vgs - Gate-Source Voltage 15 V 15 V
Series Pd85035c Pd85035c
Height 4.45 mm (Max) 4.45 mm (Max)
Length 9.4 mm (Max) 9.4 mm (Max)
Type Rf Power Mosfet Rf Power Mosfet
Width 6.1 mm (Max) 6.1 mm (Max)
Brand Stmicroelectronics Stmicroelectronics
Channel Mode Enhancement Enhancement
Factory Pack Quantity : 25 25