Product Information

PD85004

Name: PD85004
Brand: STMicroelectronics
SKU: PD85004_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD85004 electronic component of STMicroelectronics

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Datasheet

Transistors RF MOSFET RF PWR TRANSISTOR

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 2500 Multiples : 2500 PD85004 STMicroelectronics	2500 : USD 1.8687	N/A Obsolete

0 - WHS 2 MOQ : 2500 Multiples : 2500 PD85004 STMicroelectronics	2500 : USD 1.6764	N/A Obsolete

0 - WHS 3 MOQ : 1 Multiples : 1 PD85004 STMicroelectronics	1 : USD 6.0553 10 : USD 2.1655 100 : USD 1.9192 500 : USD 1.7755 1000 : USD 1.6318 5000 : USD 1.5395 10000 : USD 1.5087	N/A Obsolete

0 - WHS 4 MOQ : 2500 Multiples : 2500 PD85004 STMicroelectronics	2500 : USD 2.2866	N/A Obsolete

0 - WHS 5 MOQ : 2500 Multiples : 2500 PD85004 STMicroelectronics	2500 : USD 2.2866	N/A Obsolete

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Additional Infomation About Product

PD85004 RF power transistor the LdmoST plastic family Features Excellent thermal stability Common source configuration Broadband performances P = 4 W with 17 dB gain 870 MHz OUT Plastic package SOT-89 ESD protection Supplied in tape and reel In compliance with the 2002/95/EC european Figure 1. Pin connection directive Description Source The PD85004 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85004s superior gain and efficiency makes it an ideal solution for mobile radio. Source Gate Drain Table 1. Device summary Order code Marking Package Packaging PD85004 8504 SOT-89 Tape and reel August 2008 Rev 2 1/18 www.st.com 18Contents PD85004 Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 4 3 Impedances 5 4 DC curves . 6 5 RF curves 7 6 Schematic and BOM . 9 7 Demonstration board photo 11 8 Package mechanical data 12 8.1 Thermal pad and via design . 14 8.2 Soldering profile 15 9 Revision history . 17 2/18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 2 A 2 A
Vds - Drain-Source Breakdown Voltage 40 V 40 V
Operating Frequency 1 GHz 1 GHz
Gain 17 Db At 870 Mhz 17 Db At 870 Mhz
Output Power 4 W 4 W
Configuration Single Single
Pd - Power Dissipation 6 W 6 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 89 SOT - 89
Packaging Reel Reel
Vgs - Gate-Source Voltage 15 V 15 V
Series Pd85004 Pd85004
Brand Stmicroelectronics Stmicroelectronics
Gate-Source Breakdown Voltage 15 V 15 V
Factory Pack Quantity : 2500 2500
Height 1.6 mm 1.6 mm
Length 4.6 mm 4.6 mm
Type Rf Power Mosfet Rf Power Mosfet
Width 2.6 mm 2.6 mm
Channel Mode Enhancement Enhancement
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075
Mxhts 85412101 85412101
Product Type Rf Mosfet Transistors Rf Mosfet Transistors
Subcategory Mosfets Mosfets
Taric 8541210000 8541210000