Product Information

PD55025-E

PD55025-E electronic component of STMicroelectronics

Datasheet
Transistors RF MOSFET RF Pwr Transistors LDMOST Plastic N Ch
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

400: USD 26.6694 ea
Line Total: USD 10667.76

0 - Global Stock
MOQ: 400  Multiples: 400
Pack Size: 400

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 400
Multiples : 400

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PD55025-E
STMicroelectronics

400 : USD 26.6694

0 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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PD55025-E
STMicroelectronics

1 : USD 32.5598

0 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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PD55025-E
STMicroelectronics

1 : USD 35.1173

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Transistor Type
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Height
Length
Width
Channel Mode
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 25 W with 14.5dB gain 500 MHz / OUT 12.5 V PowerSO-10RF New RF plastic package (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the PowerSO-10RF excellent gain, linearity and reliability of STs (straight lead) latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The devices superior linearity performance Figure 1. Pin connection makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to Source offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Drain Gate Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Table 1. Device summary Order code Package Packing PD55025-E PowerSO-10RF (formed lead) Tube PD55025S-E PowerSO-10RF (straight lead) Tube PD55015TR-E PowerSO-10RF (formed lead) Tape and reel PD55015STR-E PowerSO-10RF (straight lead) Tape and reel June 2010 Doc ID 12330 Rev 2 1/23 www.st.com 23Contents PD55025-E, PD55025S-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 5 Test circuit 11 6 Circuit layout 12 7 Common source s-parameter 14 8 Package mechanical data 17 9 Revision history . 22 2/23 Doc ID 12330 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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