Product Information

RSQ015N06FRATR

Name: RSQ015N06FRATR
Brand: ROHM
SKU: RSQ015N06FRATR_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RSQ015N06FRATR electronic component of ROHM

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See Product Specifications
Datasheet

MOSFET, AEC-Q101, N-CH, 60V, TSMT

Manufacturer: ROHM

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.7207 ea
Line Total: USD 3.6

0 - Global Stock

MOQ: 5 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 20 May to Fri. 24 May MOQ : 5 Multiples : 1 RSQ015N06FRATR ROHM	5 : USD 0.7207 10 : USD 0.5297 100 : USD 0.3207 500 : USD 0.3105

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Additional Infomation About Product

RSQ015N06 FRA Nch 60V 1.5A Power MOSFET Datasheet Outline (6) V TSMT6 60V DSS (5) (4) R (Max.) 290m DS(on) (1) I 1.5A D (2) P 1.25W D (3) Features Inner circuit (1) Drain 1) Low on - resistance. (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant 1 ESD PROTECTION DIODE 2 BODY DIODE 5) AEC-Q101 Qualified Packaging specifications Packaging Taping Reel size (mm) 180 Application Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking PX Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 60 V DSS *1 Continuous drain current I 1.5 A D *2 Pulsed drain current A I 6 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.25 W D Power dissipation *4 0.6 W P D T Junction temperature 150 C j Range of storage temperature T C 55 to +150 stg www.rohm.com 2016.06 - Rev.B 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 1/11Data Sheet RSQ015N06FRA Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 100 C/W thJA *4 Thermal resistance, junction - ambient R - - 208 C/W thJA Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA Breakdown voltage (BR)DSS D - 67 - mV/C temperature coefficient T referenced to 25C j I V = 60V, V = 0V Zero gate voltage drain current - - 1 A DSS DS GS I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - 4.4 - mV/C temperature coefficient T referenced to 25C j V =10V, I =1.5A - 210 290 GS D V =4.5V, I =1.5A - 240 330 GS D Static drain - source *5 R m DS(on) on - state resistance V =4V, I =1.5A - 255 350 GS D V =10V, I =1.5A, T =125C - 360 510 GS D j R Gate input resistannce f = 1MHz, open drain - 10 - G *5 V = 10V, I = 1.5A Transconductance 1.0 2.4 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10 s, Duty cycle 1% *3 Mounted on a seramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) www.rohm.com 2016.06 - Rev.B 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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Manufacturer ROHM ROHM
Product Category MOSFET MOSFET
Transistor Polarity N Channel N Channel
Brand Rohm Rohm
Continuous Drain Current Id 1.5 A 1.5 A
Drain Source Voltage Vds 60 V 60 V
On Resistance Rdson 0.21 Ohms 0.21 Ohms
Rdson Test Voltage Vgs 10 V 10 V
Threshold Voltage Vgs 2.5 V 2.5 V
Power Dissipation Pd 1.25 W 1.25 W
Transistor Case Style TSMT TSMT
No. Of Pins 6Pins 6Pins
Operating Temperature Max 150 C 150 C
Automotive Qualification Standard AEC - Q101 AEC - Q101
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (15 - Jan - 2018) No SVHC (15 - Jan - 2018)