X-On Electronics has gained recognition as a prominent supplier of RSQ015P10HZGTR mosfet across the USA, India, Europe, Australia, and various other global locations. RSQ015P10HZGTR mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RSQ015P10HZGTR

RSQ015P10HZGTR electronic component of ROHM
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See Product Specifications
Part No.RSQ015P10HZGTR
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET PCH -100V -1.5A SMALL SIGNAL M
Datasheet: RSQ015P10HZGTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8854 ea
Line Total: USD 0.89

Availability - 10370
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16985 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7487
10 : USD 0.6049
100 : USD 0.4588
500 : USD 0.4002
1000 : USD 0.3496
3000 : USD 0.3162
6000 : USD 0.3082
9000 : USD 0.299
24000 : USD 0.2956

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We proudly offer the RSQ015P10HZGTR MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RSQ015P10HZGTR MOSFET.

RSQ015P10HZG Datasheet Pch -100V -1.5A Small Signal MOSFET llOutline SOT-457T V -100V DSS SC-95 R (Max.) 470m DS(on) TSMT6 I 1.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Small Surface Mount Package (TSMT6) 3) Pb-free lead plating RoHS compliant 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking ZN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -100 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6.0 A DP V Gate - Source voltage 20 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180328 - Rev.001 RSQ015P10HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -100 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -91.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -100V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.0 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -1.5A - 350 470 GS D Static drain - source *4 R V = -4.5V, I = -0.75A - 380 510 m DS(on) GS D on - state resistance V = -4.0V, I = -0.75A - 400 540 GS D R Gate resistance f = 1MHz, open drain - 8.2 - G Forward Transfer *4 Y V = -10V, I = -1.5A 1.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180328 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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