X-On Electronics has gained recognition as a prominent supplier of RSQ015N06TR mosfet across the USA, India, Europe, Australia, and various other global locations. RSQ015N06TR mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RSQ015N06TR ROHM

RSQ015N06TR electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RSQ015N06TR
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET SW MOSFET MID PWR N-CH 60V 1.5A
Datasheet: RSQ015N06TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

182: USD 0.2242 ea
Line Total: USD 40.8

Availability - 2517
Ships to you between
Fri. 14 Jun to Thu. 20 Jun
MOQ: 182  Multiples: 1
Pack Size: 1
Availability Price Quantity
97 - WHS 1


Ships to you between
Fri. 21 Jun to Wed. 26 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0045
10 : USD 0.8335
30 : USD 0.7471
100 : USD 0.6623
500 : USD 0.6126
1000 : USD 0.5851

2517 - WHS 2


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 182
Multiples : 1
182 : USD 0.2242
200 : USD 0.2227
500 : USD 0.2145
1000 : USD 0.2015
2000 : USD 0.1999

1741 - WHS 3


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 274
Multiples : 1
274 : USD 0.3728
500 : USD 0.3594
1000 : USD 0.3478

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the RSQ015N06TR from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSQ015N06TR and other electronic components in the MOSFET category and beyond.

RSQ015N06 Datasheet Nch 60V 1.5A Small Signal MOSFET llOutline SOT-457T V 60V DSS SC-95 R (Max.) 290m DS(on) TSMT6 I 1.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Quantity (pcs) 3000 Taping code TR Marking PX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 20 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.004 RSQ015N06 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.8 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 1.5A - 210 290 GS D Static drain - source *4 R V = 4.5V, I = 1.5A - 240 330 m DS(on) GS D on - state resistance V = 4V, I = 1.5A - 255 350 GS D R Gate resistance f = 1MHz, open drain - 10 - G Forward Transfer *4 Y V = 10V, I = 1.5A 1.0 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a seramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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