Product Information

824012823

824012823 electronic component of Wurth

Datasheet
ESD Suppressors / TVS Diodes WE-TVS Diode Array 3.3V 0.18pF 2Channel

Manufacturer: Wurth
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8605 ea
Line Total: USD 0.86

1282 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
161 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

824012823
Wurth

1 : USD 0.8332
10 : USD 0.7595
100 : USD 0.6955
500 : USD 0.6182
1000 : USD 0.553
3000 : USD 0.4758

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Dimensions: mm Recommended Land Pattern: mm Absolute Maximum Ratings (Ambient Temperature 25C): Properties Test conditions Value Unit (Reverse) Peak Pulse Current I t = 8/20s 3 A 0,8 Peak p 0,2 0,05 I t = 5/50ns (Reverse) Peak Pulse Current 20 A 6 4 Peak EFT p 1 3 V ESD Air Discharge Capability 1) 15 kV ESD Air ESD Contact Discharge V 8 kV Capability 2) ESD Contact Channels 2 1) in positive and negative polarity 2) in positive and negative polarity 6 4 0,8 Certification: 1 3 0,2 RoHS Approval Compliant 2011/65/EU&2015/863 REACh Approval Conform or declared (EC)1907/2006 1,2 0,05 Scale - 20:1 Halogen Free Conform JEDEC JS709B Halogen Free Conform IEC 61249-2-21 Schematic: General Information: Operating Temperature -55 up to +85 C Storage Conditions (in original < 40 C < 90 % RH packaging) Moisture Sensitivity Level (MSL) 3 Test conditions of Electrical Properties: +20 C, 33 % RH if not specified differently V was measured by Transmission Line Pulsing (TLP) System. TLP conditions: Z0=50, Ch Clamp ESD tp=100ns, tr=1ns 1 2 3 I/O 1 I/O 2 GND Compliant: IEC 61000-4-2, -4 and -5 Scale - 20:1 Product Marking: Pin 1 CHECKED REVISION DATE (YYYY-MM-DD) GENERAL TOLERANCE PROJECTION METHOD Marking 1 RoD 001.001 2021-04-22 DIN ISO 2768-1m DESCRIPTION WE-TVS TVS Diode Super Speed Wrth Elektronik eiSos GmbH & Co. KG ORDER CODE EMC & Inductive Solutions Series Max-Eyth-Str. 1 824012823 74638 Waldenburg Germany SIZE/TYPE BUSINESS UNIT STATUS PAGE Tel. +49 (0) 79 42 945 - 0 www.we-online.com DFN1210-6L eiSos Valid 1/8 eiSos we-online.com This electronic component has been designed and developed for usage in general electronic equipment only. This product is not authorized for use in equipment where a higher safety standard and reliability standard is especially required or where a failure of the product is reasonably expected to cause severe personal injury or death, unless the parties have executed an agreement specifically governing such use. Moreover Wrth Elektronik eiSos GmbH & Co KG products are neither designed nor intended for use in areas such as military, aerospace, aviation, nuclear control, submarine, transportation (automotive control, train control, ship control), transportation signal, disaster prevention, medical, public information network etc.. Wrth Elektronik eiSos GmbH & Co KG must be informed about the intent of such usage before the design-in stage. In addition, sufficient reliability evaluation checks for safety must be performed on every electronic component which is used in electrical circuits that require high safety and reliability functions or performance. 45 0,438 1,0 0,05 0,35 0,05 +0,03 0,02 -0,02 +0,05 0,45 -0,04 0,6 1,55Electrical Properties: Insertion Loss SDD21 (I/O to GND): Value Properties Test conditions Unit 0 min. typ. max. Channel Operating V I/O to GND 3.3 V Voltage Ch (Reverse) V I/O to GND I =1mA Breakdown 4.5 V -5 BR BR Voltage I/O to GND Channel (Reverse) I 0.5 A V =V V = 0V Leakage Current Ch Leak I/O Ch GND V GND to I/O I =15mA Forward Voltage 0.9 1.1 V F F -10 I/O to GND (Channel) Input C 0.18 0.27 pF V =1.65V V =0V f=1MHz Capacitance Ch I/O GND Channel to between I/O pins Channel Input C 0.04 0.08 pF V =1.65V V =0V f=1MHz Cross Capacitance I/O GND -15 Channel ESD IEC 61000-4-2 +8kV (TLP=16A) V 13 V Clamping Voltage Ch Clamp ESD Contact Mode I/O to GND Polarity Unidirectional -20 -25 -30 1E+7 1E+8 1E+9 1E+10 Frequency Hz CHECKED REVISION DATE (YYYY-MM-DD) GENERAL TOLERANCE PROJECTION METHOD RoD 001.001 2021-04-22 DIN ISO 2768-1m DESCRIPTION WE-TVS TVS Diode Super Speed Wrth Elektronik eiSos GmbH & Co. KG ORDER CODE EMC & Inductive Solutions Series Max-Eyth-Str. 1 824012823 74638 Waldenburg Germany SIZE/TYPE BUSINESS UNIT STATUS PAGE Tel. +49 (0) 79 42 945 - 0 www.we-online.com DFN1210-6L eiSos Valid 2/8 eiSos we-online.com This electronic component has been designed and developed for usage in general electronic equipment only. This product is not authorized for use in equipment where a higher safety standard and reliability standard is especially required or where a failure of the product is reasonably expected to cause severe personal injury or death, unless the parties have executed an agreement specifically governing such use. Moreover Wrth Elektronik eiSos GmbH & Co KG products are neither designed nor intended for use in areas such as military, aerospace, aviation, nuclear control, submarine, transportation (automotive control, train control, ship control), transportation signal, disaster prevention, medical, public information network etc.. Wrth Elektronik eiSos GmbH & Co KG must be informed about the intent of such usage before the design-in stage. In addition, sufficient reliability evaluation checks for safety must be performed on every electronic component which is used in electrical circuits that require high safety and reliability functions or performance. Insertion Loss dB

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
MDC
Midcom Wurth Electronics
Midcom / Wurth Electronics
WUR
WURTH ELECTRONICS
Wurth Electronics Inc
Wurth Electronics Midcom
WURTH ELEKTRONIK
WÜRTH ELEKTRONIK
Wurth Elektronik / Midcom

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