V 1200 V
DS
I @ 25C 7.2 A
D
C3M0350120J
R 350 m
DS(on)
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features Package
3rd generation SiC MOSFET technology TAB
Drain
Low impedance package with driver source pin
7mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Q )
rr
Halogen free, RoHS compliant
1 2 3 4 5 6 7
G KS S S S S S
Benefits
Drain
(TAB)
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Gate
(Pin 1)
Increase system switching frequency
Driver Power
Source Source
(Pin 2) (Pin 3,4,5,6,7)
Applications
Renewable energy
High voltage DC/DC converters
Switch Mode Power Supplies
Marking
Part Number Package
UPS
C3M0350120J TO-263-7 C3M0350120J
Maximum Ratings (T = 25 C unless otherwise specified)
C
Unit
Symbol Parameter Value Test Conditions Note
Drain - Source Voltage 1200 V V = 0 V, I = 100 A
V GS D
DSmax
Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1
V
GSmax
Gate - Source Voltage (static) -4/+15 V Static Note: 2
V
GSop
7.2 Fig. 19
V = 15 V, T = 25C
GS C
I Continuous Drain Current A
D
5
V = 15 V, T = 100C
GS C
I Pulsed Drain Current 20 A Fig. 22
Pulse width t limited by T
D(pulse) jmax
P
P Power Dissipation 40.8 W T =25C, T = 150 C Fig. 20
C J
D
-55 to
Operating Junction and Storage Temperature C
T , T
J stg
+150
Solder Temperature 260 C 1.6mm (0.063) from case for 10s
T
L
Note (1): When using MOSFET Body Diode V = -4V/+19V
GSmax
Note (2): MOSFET can also safely operate at 0/+15 V
1 C3M0350120J Rev. A, 03-2020Electrical Characteristics (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Breakdown Voltage 1200 V V = 0 V, I = 100 A
(BR)DSS GS D
1.8 2.5 3.6 V VDS = VGS, ID = 1 mA
V Gate Threshold Voltage Fig. 11
GS(th)
2.0 V V = V , I = 1 mA, T = 150C
DS GS D J
I Zero Gate Voltage Drain Current 1 50 A V = 1200 V, V = 0 V
DSS DS GS
I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V
GSS GS DS
350 455 VGS = 15 V, ID = 3.6 A
Fig. 4,
R Drain-Source On-State Resistance m
DS(on)
5, 6
525 VGS = 15 V, ID = 3.6 A, TJ = 150C
2.9 V = 20 V, I = 3.6 A
DS DS
gfs Transconductance S Fig. 7
2.6 V = 20 V, I = 3.6 A, T = 150C
DS DS J
Ciss Input Capacitance 345
Fig. 17,
VGS = 0 V, VDS = 1000 V
C Output Capacitance 20
oss pF
18
f = 1 MHz
C Reverse Transfer Capacitance 3.4
rss
AC
V = 25 mV
E C Stored Energy 10.6 J Fig. 16
oss oss
E Turn-On Switching Energy (Body Diode FWD) 46
ON
V = 800 V, V = -4 V/15 V, I = 3.6 A,
DS GS Fig. 26,
D
J
29
R = 2.5 , L= 716 H
G(ext)
E Turn-Off Switching Energy (Body Diode FWD) 8
OFF
td(on) Turn-On Delay Time 6
V = 800 V, V = -4 V/15 V
DD GS
tr Rise Time 7
I = 3.6 A, R = 0 ,
D G(ext) Fig. 27,
ns
Timing relative to V 28, 29
DS
t Turn-Off Delay Time 9
d(off)
Inductive load
t Fall Time 11
f
,
R Internal Gate Resistance 7 f = 1 MHz V = 25 mV
G(int) AC
Q Gate to Source Charge 5.1
gs
VDS = 800 V, VGS = -4 V/15 V
Q Gate to Drain Charge 4.6 I = 3.6 A
gd nC D Fig. 12
Per IEC60747-8-4 pg 21
Q Total Gate Charge 13
g
(T = 25C unless otherwise specified)
Reverse Diode Characteristics
C
Symbol Parameter Typ. Max. Unit Test Conditions Note
4.5 V V = -4 V, I = 1.8 A
GS SD
Fig. 8,
VSD Diode Forward Voltage
9, 10
4.0 V V = -4 V, I = 1.8 A, T = 150 C
GS SD J
I Continuous Diode Forward Current 7.3 A V = -4 V Note 1
S
GS
IS, pulse Diode pulse Current 20 A Note 1
V = -4 V, pulse width t limited by T
jmax
GS P
t Reverse Recover time 5 ns
rr
V = -4 V, I = 3.6 A, V = 800 V
Note 1,
GS SD R
Q Reverse Recovery Charge 23 nC
rr Fig. 29
dif/dt = 3550 A/s, T = 25 C
J
I Peak Reverse Recovery Current 8 A
rrm
Thermal Characteristics
Typ.
Symbol Parameter Unit Test Conditions Note
RJC Thermal Resistance from Junction to Case 2.9 C/W Fig. 21
2 C3M0350120J Rev. A, 03-2020