Product Information

WSD30160DN56

WSD30160DN56 electronic component of Winsok

Datasheet
MOSFET N Trench 30V 120A (Tc) 2.5V @ 250uA 2.5 mΩ @ 20A,10V DFN5x6-8 RoHS
Manufacturer: Winsok
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5434 ea
Line Total: USD 0.54

1862 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1717 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.5299
10 : USD 0.4694
30 : USD 0.4432
100 : USD 0.4089
500 : USD 0.3506
1000 : USD 0.3405

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The WSD30160DN56 with MOSFET N Trench 30V 120A (Tc) 2.5V @ 250uA 2.5 mΩ @ 20A,10V DFN5x6-8 RoHS is a discrete MOSFET transistor device in a 5x6mm (DFN5x6-8) package, manufactured by Winsok. It has the following electrical features: 30V drain-source breakdown voltage, 120A max drain current, 2.5V gate to source threshold voltage, 250uA gate-source leakage current, and 2.5 mΩ on-resistance at 20A, 10V. It is RoHS compliant and comes in a Pb-free MSL 1 rated package, suited for automotive, telecom/networking, consumer, and power supply applications as an excellent power switching solution.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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