Product Information

WFF2N65L

WFF2N65L electronic component of Winsemi

Datasheet
MOSFET N Trench 650V 2A (Tc) 4V @ 250uA 5 Ω @ 1A,10V TO-220F RoHS

Manufacturer: Winsemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.314 ea
Line Total: USD 0.31

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

WFF2N65L
Winsemi

1 : USD 0.314
10 : USD 0.2571
30 : USD 0.2327
100 : USD 0.2022
500 : USD 0.1886
1000 : USD 0.1806

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The WFF2N65L is a two-terminal N-channel enhancement mode MOSFET with a trench structure featuring 650 V drain-source breakdown voltage, 2 A continuous drain current (Tc) of 4 V @ 250 µA, 5 O gate-source on-state resistance @ 1A, and 10 V gate-threshold voltage. The device is packaged in a TO-220F RoHS package and is manufactured by Winsemi.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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