Product Information

NXPSC08650B6J

Name: NXPSC08650B6J
Brand: WeEn Semiconductor
SKU: NXPSC08650B6J_WeEnSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

NXPSC08650B6J electronic component of WeEn Semiconductor

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Schottky Diodes & Rectifiers NXPSC08650B6/D2PAK/REEL 13\" Q1/T1 *STANDARD MARK SMD

Manufacturer: WeEn Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 800 Multiples : 800 NXPSC08650B6J WeEn Semiconductor	800 : USD 3.7645 1600 : USD 3.0479 2400 : USD 2.8955	N/A Obsolete

0 - WHS 2 MOQ : 1 Multiples : 1 NXPSC08650B6J WeEn Semiconductor	1 : USD 6.0093 10 : USD 5.1815 100 : USD 4.2453	N/A Obsolete

0 - WHS 3 MOQ : 1 Multiples : 1 NXPSC08650B6J WeEn Semiconductor	1 : USD 6.0093 10 : USD 5.1815 100 : USD 4.2453	N/A Obsolete

0 - WHS 4 MOQ : 1 Multiples : 1 NXPSC08650B6J WeEn Semiconductor	1 : USD 4.46 10 : USD 3.8927 30 : USD 3.7879 100 : USD 3.6834 500 : USD 3.6371 1000 : USD 3.5787	N/A Obsolete

0 - WHS 5 MOQ : 3200 Multiples : 3200 NXPSC08650B6J WeEn Semiconductor	3200 : USD 2.6518	N/A Obsolete

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Additional Infomation About Product

NXPSC08650B Silicon Carbide Diode 4 January 2017 Product data sheet 1. General description Silicon Carbide Schottky diode in TO263 (D2PAK) plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits Highly stable switching performance High forward surge capability I FSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom/Server SMPS UPS PV inverter PC Silverbox LED/OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 650 V RRM voltage I average forward = 0.5 T 119 C square-wave - - 8 A F(AV) mb current pulse Fig. 1 Fig. 2 Fig. 3 Fig. 4 T junction temperature - - 175 C j Static characteristics V forward voltage I = 8 A T = 25 C Fig. 6 - 1.5 1.7 V F F j I = 8 A T = 150 C Fig. 6 - 1.8 2.1 V F j Dynamic characteristics Q recovered charge I = 8 A dI /dt = 500 A/s V = 400 V - 13 - nC r F F R T = 25 C Fig. 7 jWeEn Semiconductors NXPSC08650B Silicon Carbide Diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 n.c. not connected K A 001aaa020 2 K cathode 1 3 A anode mb K mounting base connected to cathode TO263N 1 It is not possible to connect to pin 2 of the TO263 package. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NXPSC08650B - plastic single-ended surface-mounted package (D2PAK) 3 TO263N leads (one lead cropped) NXPSC08650B All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 4 January 2017 2 / 10

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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