Product Information

BTA216-600E,127

BTA216-600E,127 electronic component of WeEn Semiconductor

Datasheet
BTA216-600E/SIL3P/STANDARD MAR

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8021 ea
Line Total: USD 0.8

7275 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2425 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

BTA216-600E,127
WeEn Semiconductor

1 : USD 1.1862
6000 : USD 0.6343
10000 : USD 0.6047

     
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DISCRETE SEMICONDUCTORS DATA SHEET BTA216 series D, E and F Three quadrant triacs guaranteed commutation September 2018 Product specificationWeEn Semiconductors Product specification Three quadrant triacs BTA216 series D, E and F guaranteed commutation GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated guaranteed commutationtriacs in SYMBOL PARAMETER MAX. UNIT a plastic envelope intended for use in motor control circuits or with other highly inductive BTA216- 600D loads. These devices balance the BTA216- 600E requirements of commutation performance BTA216- 600F and gate sensitivity. Thesensitive gat E V Repetitive peak off-state 600 V DRM series andlogic leve D series are intended voltages for interfacing with low power drivers, I RMS on-state current 16 A T(RMS) including micro controllers. I Non-repetitive peak on-state 140 A TSM current PINNING - TO220AB PIN CONFIGURATION SYMBOL mb PIN DESCRIPTION 1 main terminal 1 T2 T1 2 main terminal 2 G sym051 3 gate 1 2 3 tab main terminal 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 1 V Repetitive peak off-state - 600 V DRM voltages I RMS on-state current full sine wave - 16 A T(RMS) T 99 C mb I Non-repetitive peak full sine wave TSM on-state current T = 25 C prior to j surge t = 20 ms - 140 A t = 16.7 ms - 150 A 2 2 2 ItI t for fusing t = 10 ms - 98 A s dI /dt Repetitive rate of rise of I = 20 A I = 0.2 A - 100 A/s T TM G on-state current after dI /dt = 0.2 A/s G triggering I Peak gate current - 2 A GM P Peak gate power - 5 W GM P Average gate power over any 20 ms - 0.5 W G(AV) period T Storage temperature -40 150 C stg T Operating junction - 125 C j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. September 2018 1 Rev 2.100

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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