Product Information

BTA204W-600B,135

BTA204W-600B,135 electronic component of WeEn Semiconductor

Datasheet
Triacs TAPE13 TRIAC

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6844 ea
Line Total: USD 0.68

19614 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19604 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

BTA204W-600B,135
WeEn Semiconductor

1 : USD 0.5831
10 : USD 0.5095
100 : USD 0.3565
500 : USD 0.3071
1000 : USD 0.2679
2000 : USD 0.2415
4000 : USD 0.2381
8000 : USD 0.2173
24000 : USD 0.2173

     
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Mounting Style
Packaging
Hts Code
LoadingGif

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BTA204W-600B 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT223 surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Applications General purpose motor controls Home appliances Rectifier-fed DC inductive loads e.g. DC motors and solenoids 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 108 C Fig. 1 - - 1 A T(RMS) sp Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 11 A TSM j(init) state current t = 16.7 ms p full sine wave T = 25 C - - 10 A j(init) t = 20 ms Fig. 4 Fig. 5 p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 50 mA GT D T T = 25 C Fig. 9 j V = 12 V I = 0.1 A T2+ G- - - 50 mA D T T = 25 C Fig. 9 j V = 12 V I = 0.1 A T2- G- - - 50 mA D T T = 25 C Fig. 9 j I holding current V = 12 V T = 25 C Fig. 11 - - 30 mA H D j V on-state voltage I = 2 A T = 25 C Fig. 12 - 1.2 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (67% of 1000 - - V/s D DM j voltage V ) exponential waveform gate DRM open circuitWeEn Semiconductors BTA204W-600B 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit dI /dt rate of change of V = 400 V T = 125 C I = 1 A 6 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit 4. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 4 T2 T1 2 T2 main terminal 2 G sym051 3 G gate 1 2 3 4 mb mounting base connected to SC-73 (SOT223) T2 5. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA204W-600B SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads BTA204W-600B All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 2 / 14

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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