Product Information

BTA204S-800C,118

BTA204S-800C,118 electronic component of WeEn Semiconductor

Datasheet
Triacs THYR AND TRIACS

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.24 ea
Line Total: USD 600

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 2500
Multiples : 2500

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BTA204S-800C,118
WeEn Semiconductor

2500 : USD 0.285
10000 : USD 0.2758
25000 : USD 0.2652
50000 : USD 0.2617

0 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 2500
Multiples : 2500

Stock Image

BTA204S-800C,118
WeEn Semiconductor

2500 : USD 0.24
10000 : USD 0.2258

     
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BTA204S-800C 3Q Hi-Com Triac 11 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface- mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High blocking voltage capability High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt Less sensitive gate for high noise immunity Planar passivated for voltage ruggedness and reliability Surface-mountable package Triggering in three quadrants only 3. Applications General purpose motor control circuits Home appliances Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I non-repetitive peak on- full sine wave T = 25 C - - 25 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p T junction temperature - - 125 C j I RMS on-state current full sine wave T 107 C Fig. 1 - - 4 A T(RMS) mb Fig. 2 Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 35 mA GT D T T = 25 C Fig. 7 j Scan or click this QR code to view the latest information for this product DPAKNXP Semiconductors BTA204S-800C 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- - - 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - - 35 mA D T T = 25 C Fig. 7 j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 1000 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 4 A 3 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main 2 terminal 2 1 3 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA204S-800C DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BTA204S-800C All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 11 August 2014 2 / 14

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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