Product Information

BT258U-600R,127

BT258U-600R,127 electronic component of WeEn Semiconductor

Datasheet
BT258U-600R/SIL3/STANDARD MARK
Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7500: USD 1.2096 ea
Line Total: USD 9072

0 - Global Stock
MOQ: 7500  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 7500
Multiples : 1

Stock Image

BT258U-600R,127
WeEn Semiconductor

7500 : USD 1.2096
75000 : USD 1.115
750000 : USD 0.5981
3750000 : USD 0.3787
7500000 : USD 0.3776

0 - WHS 2


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

BT258U-600R,127
WeEn Semiconductor

1 : USD 1.0714
3 : USD 0.7736
10 : USD 0.6255
30 : USD 0.5628
41 : USD 0.4103

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Additional Infomation About Product

BT258U-600R Logic level thyristor 6 August 2018 Product data sheet 1. General description Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Sensitive gate Planar passivated for voltage ruggedness and reliability Direct triggering from low power drivers and logic ICs Surface mountable package 3. Applications General purpose switching and phase control Ignition circuits, CDI for 2- and 3-wheelers Motor control - e.g. small kitchen appliances 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 600 V RRM voltage I average on-state half sine wave T 111 C Fig. 1 - - 5 A T(AV) mb current I RMS on-state current half sine wave T 111 C Fig. 2 - - 8 A T(RMS) mb Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 75 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 82 A j(init) t = 8.3 ms p T junction temperature 1 - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - 50 200 A GT D T j Dynamic charateristics dV /dt rate of rise of off-state V = 402 V T = 125 C R = 100 50 100 - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform Fig. 12WeEn Semiconductors BT258U-600R Logic level thyristor 1 Operation above 110C may require the use of a gate to cathode resistor of 1k or less. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb A K G 2 A anode sym037 3 G gate mb A mounting base connected to anode 1 2 3 IPAK (TO-251) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT258U-600R IPAK plastic single-ended package (IPAK) 3 leads (in-line) TO-251 BT258U-600R All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 6 August 2018 2 / 12

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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