BT151-1000RT,127

BT151-1000RT SCR 22 February 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance. 2. Features and benefits High junction operating temperature capability High thermal cycling performance Planar passivated for voltage ruggedness and reliability Very high bidirectional blocking voltage capability 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 1000 V DRM state voltage V repetitive peak reverse - - 1000 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 120 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 132 A j(init) t = 8.3 ms p T junction temperature - - 150 C j I average on-state half sine wave T 134 C - - 7.5 A T(AV) mb current I RMS on-state current half sine wave T 134 C Fig. 1 - - 12 A T(RMS) mb Fig. 2 Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - 2 15 mA GT D T j Dynamic characteristicsWeEn Semiconductors BT151-1000RT SCR Symbol Parameter Conditions Min Typ Max Unit dV /dt rate of rise of off-state V = 670 V T = 150 C (V = 67% - 300 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb A K G 2 A anode sym037 3 G gate mb A mounting base connected to anode 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT151-1000RT TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BT151-1000RT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 22 February 2018 2 / 12