The BT137S-800G,118 is a three-phase, insulated gate bipolar transistor (IGBT) module from WeEn Semiconductor that combines three IGBTs with three anti-parallel freewheeling diodes in a single package. It is designed to provide advanced performance and low power consumption with improved current capacity, voltage and switching characteristics. The BT137S-800G,118 features a high current capacity of 800A and an on-state voltage drop of 2.2V at 25°C. It offers a wide operating temperature range of -40°C to +160°C, as well as optimized switching performance and device reliability. The module is RoHS compliant and is suitable for use in a variety of applications, including motor control, welding and inverters.