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ASF0001000012

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ASF0001000012
ASF0001000012 is an N-Channel FET designed for low-power switching applications.
Manufacturer: WeEn Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 80.4375 ea
Line Total: USD 80.44

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 1 Multiples : 1 ASF0001000012 WeEn Semiconductor	1 : USD 80.4375

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Additional Infomation About Product

WeEn Semiconductor ASF0001000012 is a PMOS enhancement mode field effect transistor (FET) with a very low RDS(on) and fast switching. The FET has an ultra-low gate threshold voltage of 0.6V and is ideal for driving power MOSFETs and IGBTs, such as in LED lighting, LED displays, and other switching applications. It has a logic level gate drive and a fast and predictable gate response. The package is a low profile SOT-23.

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