Product Information

ACT102H-600D,118

ACT102H-600D,118 electronic component of WeEn Semiconductor

Datasheet
ACT102H-600D/SO8/REEL 13" Q1/T

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1744 ea
Line Total: USD 0.17

5947 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5947 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

ACT102H-600D,118
WeEn Semiconductor

1 : USD 0.1744
10 : USD 0.1727
25 : USD 0.1697
100 : USD 0.1686
250 : USD 0.1675
500 : USD 0.1664
1000 : USD 0.1631
3000 : USD 0.1631
6000 : USD 0.1631

423 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

ACT102H-600D,118
WeEn Semiconductor

1 : USD 0.554
10 : USD 0.5439
30 : USD 0.5358
100 : USD 0.5299

5947 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 49
Multiples : 1

Stock Image

ACT102H-600D,118
WeEn Semiconductor

49 : USD 0.1697
100 : USD 0.1686
250 : USD 0.1675
500 : USD 0.1664
1000 : USD 0.1631

     
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ACT102H-600D AC Thyristor power switch 20 August 2014 Product data sheet 1. General description An AC Thyristor power switch with very high noise immunity and over-voltage protection configured for negative gate triggering in a SOT96-1 (SO8) small surface-mountable plastic package 2. Features and benefits Exclusive negative gate triggering Full cycle AC conduction High noise immunity Remote gate separates the gate driver from the effects of the load current Surface-mountable package Very sensitive gate for lowest gate trigger current Safe clamping of low energy over-voltage transients Self-protective turn-on during high energy voltage transients 3. Applications Fan motor circuits Pump motor circuits Lower-power highly inductive, resistive and safety loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I non-repetitive peak on- full sine wave T = 25 C - - 8 A TSM j(init) state current t = 20 ms Fig. 3 Fig. 4 p I RMS on-state current full sine wave T 100 C Fig. 1 - - 0.2 A T(RMS) amb Fig. 2 V peak pulse voltage T 25 C non-repetitive, off-state - - 2 kV PP j Fig. 5 Static characteristics I gate trigger current V = 12 V I = 100 mA LD+ G- 0.5 - 5 mA GT D T T = 25 C Fig. 7 j Scan or click this QR code to view the latest information for this product SO8NXP Semiconductors ACT102H-600D AC Thyristor power switch Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 100 mA LD- G- 0.5 - 5 mA D T T = 25 C Fig. 7 j V clamping voltage I = 0.1 mA t = 1 ms T 125 C 650 - - V CL CL p j 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 n.c. not connected 8 5 LD 2 LD Load G 3 n.c. not connected CM 001aaj924 4 n.c. not connected 1 4 SO8 (SOT96-1) 5 G Gate 6 CM Common 7 CM Common 8 n.c. not connected 6. Ordering information Table 3. Ordering information Type number Package Name Description Version ACT102H-600D SO8 plastic small outline package 8 leads body width 3.9 mm SOT96-1 ACT102H-600D All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 20 August 2014 2 / 14

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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