VS-VSKT570-16PbF www.vishay.com Vishay Semiconductors Thyristor/Thyristor (Super MAGN-A-PAK Power Modules), 570 A FEATURES High current capability High surge capability Industrial standard package 3000 V isolating voltage with non-toxic RMS substrate Designed and qualified for industrial level UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Super MAGN-A-PAK TYPICAL APPLICATIONS Motor starters DC motor controls - AC motor controls PRIMARY CHARACTERISTICS Uninterruptible power supplies I 570 A T(AV) Type Modules - thyristor, standard Package Super MAGN-A-PAK MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I T = 85 C 570 T(AV) C I T = 85 C 894 T(RMS) C A 50 Hz 18 000 I TSM 60 Hz 18 800 50 Hz 1620 2 2 I t kA s 60 Hz 1473 2 2 I t 16 200 kA s V /V 1600 V DRM RRM T Range -40 to +125 Stg C T Range -40 to +135 J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS /V , MAXIMUM V RRM DRM V , MAXIMUM NON-REPETITIVE I /I MAXIMUM RSM RRM DRM REPETITIVE PEAK REVERSE VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE AT T = T MAXIMUM J J CODE VOLTAGE V mA V VS-VSKT570-16PbF 16 1600 1700 110 Revision: 26-Jul-2018 Document Number: 94683 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-VSKT570-16PbF www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 570 A Maximum average on-state current I 180 conduction, half sine wave T(AV) at case temperature 85 C Maximum RMS on-state current I 180 conduction, half sine wave at T = 85 C 894 A T(RMS) C t = 10 ms 18.0 No voltage reapplied t = 8.3 ms 18.8 Maximum peak, one-cycle, I TSM, kA non-repetitive on-state surge current I FSM t = 10 ms 15.1 100 % V RRM reapplied Sinusoidal t = 8.3 ms 15.8 half wave, t = 10 ms 1620 initial T = T maximum No voltage J J reapplied t = 8.3 ms 1473 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 1146 100 % V RRM reapplied t = 8.3 ms 1042 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 16 200 kA s Low level value or threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.59 T(TO)1 T(AV) T(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.63 T(TO)2 T(AV) J J Low level value on-state slope resistance r (16.7 % x x I < I < x I ), T = T maximum 0.41 t1 T(AV) T(AV) J J m High level value on-state slope resistance r (I > x I ), T = T maximum 0.38 t2 T(AV) J J Maximum on-state voltage drop V I = 1500 A, T = 25 C, t = 10 ms sine pulse 1.36 V TM pk J p Maximum holding current I 500 H T = 25 C, anode supply 12 V resistive load mA J Maximum latching current I 1000 L SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum rate of rise of turned-on current dI/dt T = T maximum, I = 400 A, V applied 1000 A/s J J TM DRM Gate current 1 A, dI /dt = 1 A/s g Typical delay time t 2.0 d V = 0.67 % V , T = 25 C d DRM J s I = 750 A T = T maximum, dI/dt = - 60 A/s, TM J J Typical turn-off time t 65 to 240 q V = 50 V, dV/dt = 20 V/s, gate 0 V 100 R BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise dV/dt T = T maximum, linear to V = 80 % V 1000 V/s J J D DRM of off-state voltage RMS insulation voltage V t = 1 s 3000 V INS Maximum peak reverse and I , RRM T = T maximum, rated V /V applied 110 mA J J DRM RRM off-state leakage current I DRM Revision: 26-Jul-2018 Document Number: 94683 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000