Product Information

VS-VSKJS209/150

VS-VSKJS209/150 electronic component of Vishay

Datasheet
Discrete Semiconductor Modules 200 Amp 150 Volt 11300 Amp IFSM

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 55.5534 ea
Line Total: USD 55.55

9 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1
1 : USD 48.323
10 : USD 43.0445
20 : USD 42.4235
50 : USD 41.745
100 : USD 41.147
200 : USD 40.779
500 : USD 39.6405
1000 : USD 39.123

     
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VS-VSKJS209/150 www.vishay.com Vishay Semiconductors AAP Gen 7 (TO-240AA) Power Modules Schottky Rectifier, 200 A FEATURES 175 C T operation J Low forward voltage drop High frequency operation Low thermal resistance UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance AAP Gen 7 (TO-240AA) please see www.vishay.com/doc 99912 BENEFITS Excellent thermal performances obtained by the usage of PRIMARY CHARACTERISTICS exposed direct bonded copper substrate I 200 A F(AV) High surge capability V 150 V R Easy mounting on heatsink Package AAP Gen 7 (TO-240AA) ELECTRICAL DESCRIPTION / APPLICATIONS Circuit configuration Two diodes common anode The VS-VSKJS209.. Schottky rectifier common anode has been optimized for low reverse leakage at high temperature. MECHANICAL DESCRIPTION The proprietary barrier technology allows for reliable The AAP Gen 7, new generation of ADD-A-PAK module, operation up to 175 C junction temperature. combines the excellent thermal performances obtained by Typical applications are in high current switching power the usage of exposed direct bonded copper substrate, with supplies, plating power supplies, UPS systems, converters, advanced compact simple package solution and simplified freewheeling diodes, welding, and reverse battery internal structure with minimized number of interfaces. protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 200 A F(AV) V 150 V RRM I t = 5 s sine 11 300 A FSM p V 100 A , T = 125 C 0.85 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-VSKJS209/150 UNITS Maximum DC reverse voltage V R 150 V Maximum working peak reverse voltage V RWM Revision: 03-May-17 Document Number: 93232 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-VSKJS209/150 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per module 200 Maximum average I 50 % duty cycle at T = 113 C, rectangular waveform F(AV) C forward current per leg 100 A Following any rated 5 s sine or 3 s rect. pulse 11 300 Maximum peak one cycle I load condition and with FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 1600 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1.8 A, L = 10 mH 15 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 100 A 1.01 T = 25 C J 200 A 1.35 Maximum forward voltage drop V V FM 100 A 0.85 T = 125 C J 200 A 1.13 T = 25 C 6 J Maximum reverse leakage current I V = Rated V mA RM R R T = 125 C 85 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 3000 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 7.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R 3000 (1 min) Maximum RMS insulation voltage V 50 Hz V INS 3600 (1 s) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to +175 C J Stg temperature range Maximum thermal resistance, R DC operation 0.52 thJC junction to case per leg C/W Typical thermal resistance, R 0.1 thCS case to heatsink per module 75 g Approximate weight 2.7 oz. A mounting compound is recommended and the torque to heatsink 4 Mounting torque 10 % should be rechecked after a period of 3 hours to allow for Nm busbar 3 the spread of the compound. Case style JEDEC TO-240AA compatible Revision: 03-May-17 Document Number: 93232 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
BC
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