Product Information

VS-RA220FA120

VS-RA220FA120 electronic component of Vishay

Datasheet
Discrete Semiconductor Modules 1200V, 220A, Pwr Mod Std Recvry Rectifier

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 24.4605 ea
Line Total: USD 24.46

192 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
190 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 23.851
10 : USD 21.666
25 : USD 21.2865
50 : USD 21.16
100 : USD 19.8605
250 : USD 19.1245
480 : USD 18.216

     
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RoHS - XON
Icon ROHS
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Type
Vf - Forward Voltage
Mounting Style
Package / Case
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Maximum Operating Temperature
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Transistor Polarity
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VS-RA220FA120 www.vishay.com Vishay Semiconductors SOT-227 Power Module Insulated Standard Recovery Rectifier, 220 A FEATURES Two fully independent diodes Fully insulated package High voltage rectifiers optimized for very low forward voltage drop Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 SOT-227 DESCRIPTION / APPLICATIONS These devices are intended for use in main rectification. Single or three phase bridge. PRIMARY CHARACTERISTICS I per module 220 A, T = 88 C F(AV) C V typical at 110 A 1.13 V FM Type Modules - diode, high voltage Package SOT-227 Circuit configuration Two separate diodes, parallel pin-out MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I 90 C 108 F(AV) I 173 F(RMS) A 50 Hz 1170 I FSM 60 Hz 1225 50 Hz 6840 2 2 I t A s 60 Hz 6225 2 2 I t 68 440 A s V 1200 V RRM T -55 to +150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I TYPICAL RRM, RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C CODE V V mA VS-RA220FA120 120 1200 1300 1.0 Revision: 18-Nov-2020 Document Number: 96043 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-RA220FA120 www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current at case I 180 conduction, half sine wave, 90 C 108 A F(AV) temperature per leg Maximum RMS forward current per leg I DC at 94 C case temperature 173 F(RMS) t = 10 ms 1170 No voltage reapplied t = 8.3 ms 1225 A Maximum peak, one-cycle forward, I FSM non-repetitive surge current per leg t = 10 ms 985 100 % V RRM Sinusoidal half wave, reapplied t = 8.3 ms 1030 initial t = 10 ms 6840 No voltage T = T maximum J J reapplied t = 8.3 ms 6225 2 2 2 Maximum I t for fusing per leg I t A s t = 10 ms 4840 100 % V RRM reapplied t = 8.3 ms 4400 2 2 2 Maximum I t for fusing per leg I t t = 0.1 ms to 10 ms, no voltage reapplied 68 440 A s Low level of threshold voltage per leg V 0.75 V F(TO)1 (16.7 % x x I ), T = T maximum F(AV) J J Low level value of forward slope resistance r 4.93 m f1 High level of threshold voltage per leg V 0.84 V F(TO)2 (I > x I ), T = T maximum F(AV) J J High level value of forward slope resistance r 4.85 m f2 I = 110 A, T = 25 C 1.31 FM J Maximum forward voltage drop per leg V V FM I = 110 A, T = 150 C 1.24 FM J BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T = 25 C 150 A Maximum peak reverse leakage current J I RRM per leg T = 150 C 1.5 mA J RMS insulation voltage V T = 25 C, any terminal to case, t = 1 minute 2500 V INS J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLMIN. TYP. MAX. UNITS per leg -- 0.2 Thermal resistance, R thJC junction to case per module - - 0.1 C/W Thermal resistance, case to heatsink per module R -0.1 - thCS Weight -30 - g Mounting torque to terminal - - 1.1 (9.7) Nm (lbf. in) Mounting torque to heatsink - - 1.8 (15.9) Nm (lbf. in) Case style SOT-227 R CONDUCTION PER JUNCTION SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION UNITS DEVICE 180 120 90 60 30 180 120 90 60 30 C/W VS-RA220FA120 0.06 0.037 0.082 0.116 0.188 0.039 0.066 0.087 0.121 0.19 Revision: 18-Nov-2020 Document Number: 96043 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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