VSMY3940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology FEATURES Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 AEC-Q101 qualified Peak wavelength: = 940 nm p High reliability High radiant power High radiant intensity 948553 Angle of half intensity: = 60 Suitable for high pulse current operation Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Material categorization: for definitions of compliance DESCRIPTION please see www.vishay.com/doc 99912 TM As part of the SurfLight portfolio, the VSMY3940X01 is an infrared, 940 nm emitting diode based on surface emitter RELEASED FOR APPLICATIONS technology with high radiant intensity, high optical power Infrared radiation source for operation with CMOS cameras and high speed, molded in a PLCC-2 package for surface (illumination) mounting (SMD). High speed IR data transmission IR touch panels 3D TV Light curtain PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r VSMY3940X01 15 60 940 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY3940X01-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSMY3940X01-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note MOQ: minimum order quantity Rev. 1.2, 25-Jun-14 Document Number: 84220 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY3940X01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Pulse peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 190 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature acc. figure 10, J-STD-020 T 260 C sd Thermal resistance junction/ambient J-STD-051, soldered on PCB R 250 K/W thJA 200 120 180 100 160 140 80 120 100 60 80 R = 250 K/W R = 250 K/W 40 thJA thJA 60 40 20 20 0 0 0 20406080 100 0 20406080 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.44 1.9 V F p F Forward voltage I = 1 A, t = 100 s V 2.2 V F p F Temperature coefficient of V I = 100 mA TK -1.6 mV/K F F VF Reverse current I not designed for reverse operation A R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 125 pF R j I = 100 mA, t = 20 ms I 815 24 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 120 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 55 mW F p e Temperature coefficient of I = 100 mA TK -0.25 %/K e F e Angle of half intensity 60 deg Peak wavelength I = 20 mA 920 940 960 nm F p Spectral bandwidth I = 30 mA 40 nm F Temperature coefficient of I = 100 mA TK 0.25 nm/K p F p Rise time I = 100 mA t 10 ns F r Fall time I = 100 mA t 10 ns F f Rev. 1.2, 25-Jun-14 Document Number: 84220 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P -Power Dissipation (mW) V I - Forward Current (mA) F