VS-MBR1035-M3, VS-MBR1045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES Base 150 C T operation J cathode 2 High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical 1 3 strength and moisture resistance Cathode Anode Guard ring for enhanced ruggedness and long term 2L TO-220AC reliability Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 I 10 A F(AV) V 35 V, 45 V R DESCRIPTION V at I 0.57 V F F This Schottky rectifier has been optimized for low reverse I max. 15 mA at 125 C RM leakage at high temperature. The proprietary barrier T max. 150 C J technology allows for reliable operation up to 150 C E 8 mJ junction temperature. Typical applications are in switching AS power supplies, converters, freewheeling diodes, and Package 2L TO-220AC reverse battery protection. Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 10 F(AV) A I T = 135 C 20 FRM C V 35/45 V RRM I t = 5 s sine 1060 A FSM p V 10 A , T = 125 C 0.57 V F pk J T Range -65 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-MBR1035-M3VS-MBR1045-M3 UNITS Maximum DC reverse voltage V R 35 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 135 C, rated V 10 F(AV) C R A Peak repetitive forward current I Rated V , square wave, 20 kHz, T = 135 C 20 FRM R C Following any rated load 5 s sine or 3 s rect. pulse condition 1060 and with rated V applied Non-repetitive peak surge current I RRM A FSM Surge applied at rated load conditions halfwave, 150 single phase, 60 Hz Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 4 mH 8 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 23-Nov-17 Document Number: 96266 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MBR1035-M3, VS-MBR1045-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A T = 25 C 0.84 J (1) Maximum forward voltage drop V 10 A 0.57 V FM T = 125 C J 20 A 0.72 T = 25 C 0.1 J (1) Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 15 J Threshold voltage V 0.354 V F(TO) T = T maximum J J Forward slope resistance r 17.6 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 600 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction temperature range T -65 to +150 J C Maximum storage temperature range T -65 to +175 Stg Maximum thermal resistance, R DC operation 2.0 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) MBR1035 Marking device Case style 2L TO-220AC MBR1045 Revision: 23-Nov-17 Document Number: 96266 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000