Product Information

VS-8ETH03-1-M3

VS-8ETH03-1-M3 electronic component of Vishay

Datasheet
Rectifiers 300V 8A TO-262 Fred Pt

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.013 ea
Line Total: USD 2.01

950 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
950 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.3882
10 : USD 1.1319
100 : USD 0.8804
500 : USD 0.7463
1000 : USD 0.5933

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
Cnhts
Hts Code
Mxhts
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VS-8ETH03S-M3, VS-8ETH03-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 2 1 175 C operating junction temperature 1 Meets MSL level 1, per J-STD-020, LF maximum 3 2 peak of 245 C 2 TO-262AA D PAK (TO-263AB) 3 Material categorization: for definitions of compliance Base cathode please see www.vishay.com/doc 99912 2 2 DESCRIPTION / APPLICATIONS Vishay Semiconductors 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized 1 3 1 3 performance of forward voltage drop and hyperfast N/C Anode N/C Anode recovery time. The planar structure and the platinum doped life time control VS-8ETH03S-M3 VS-8ETH03-1-M3 guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification PRIMARY CHARACTERISTICS stage of SMPS, UPS, DC/DC converters as well as I 8 A F(AV) freewheeling diodes in low voltage inverters and chopper V 300 V R motor drives. V at I 0.83 V Their extremely optimized stored charge and low recovery F F current minimize the switching losses and reduce over t 35 ns rr dissipation in the switching element and snubbers. T max. 175 C J 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V 300 V RRM Average rectified forward current I T = 155 C 8 F(AV) C A Non-repetitive peak surge current I T = 25 C 100 FSM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 300 - - R blocking voltage V R V I = 8 A - 1.0 1.25 F Forward voltage V F I = 8 A, T = 125 C - 0.83 1.00 F J V = V rated - 0.02 20 R R Reverse leakage current I A R T = 125 C, V = V rated - 6.0 200 J R R Junction capacitance C V = 300 V - 31 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 24-Oct-17 Document Number: 96238 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-8ETH03S-M3, VS-8ETH03-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = - 50 A/s, V = 30 V - - 35 F F R Reverse recovery time t T = 25 C -27 - ns rr J T = 125 C - 40 - J I = 8 A F T = 25 C - 2.2 - J Peak recovery current I dI /dt = - 200 A/s A RRM F T = 125 C - 5.3 - J V = 200 V R T = 25 C - 30 - J Reverse recovery charge Q nC rr T = 125 C - 106 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.452.5 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth, and R -0.2 - thCS case to heatsink greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style D PAK (TO-263AB) 8ETH03S Marking device Case style TO-262 8ETH03-1 100 1000 T = 175 C J 100 T = 150 C J 10 T = 125 C J T = 100 C J 10 1 T = 175 C J T = 125 C J 0.1 T = 25 C J T = 25 C J 0.01 1 0.001 0 50 100 150 200 250 300 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 24-Oct-17 Document Number: 96238 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous F Forward Current (A) I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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