VS-60EPS..PbF Series, VS-60EPS..-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Very low forward voltage drop Base cathode 150 C max. operating junction temperature Glass passivated pellet chip junction 2 Designed and qualified according to 2 JEDEC -JESD 47 3 Material categorization: 1 Available for definitions of compliance please see 1 3 TO-247AC modied Cathode Anode www.vishay.com/doc 99912 APPLICATIONS Input rectification PRODUCT SUMMARY Vishay Semiconductors switches and output rectifiers Package TO-247AC modified (2 pins) which are available in identical package outlines I 60 A F(AV) V 800 V to 1200 V R DESCRIPTION V at I 1.09 V F F High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. I 1000 A FSM These devices are intended for use in main rectification T max. 150 C J (single or three phase bridge). Diode variation Single die MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 60 A F(AV) V 800/1200 V RRM I 1000 A FSM V 60 A, T = 25 C 1.09 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM RSM V , MAXIMUM I RRM RRM NON-REPETITIVE PEAK REVERSE PART NUMBER PEAK REVERSE VOLTAGE AT 150 C VOLTAGE V mA V VS-60EPS08PbF, VS-60EPS08-M3 800 900 1 VS-60EPS12PbF, VS-60EPS12-M3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 118 C, 180 conduction half sine wave 60 F(AV) C 10 ms sine pulse, rated V applied 840 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 1000 10 ms sine pulse, rated V applied 3530 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 4220 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 42 200 A s Revision: 12-Feb-16 Document Number: 94345 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-60EPS..PbF Series, VS-60EPS..-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS 30 A, T = 25 C 1.0 V J Maximum forward voltage drop V FM 60 A, T = 25 C 1.09 V J Forward slope resistance r 3.96 m t T = 150 C J Threshold voltage V 0.74 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.35 thJC unction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth, and greased 0.2 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 60EPS08 Marking device Case style TO-247AC modified (JEDEC) 60EPS12 Revision: 12-Feb-16 Document Number: 94345 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000