Product Information

VS-5ECH06-M3/9AT

VS-5ECH06-M3/9AT electronic component of Vishay

Datasheet
Vishay Semiconductors Rectifiers 5 Amp 600 Volts Hyperfast - Low QRR

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0679 ea
Line Total: USD 1.07

5514 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3395 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3500
Multiples : 3500
3500 : USD 0.4345
7000 : USD 0.4257
10500 : USD 0.4257
24500 : USD 0.4257

2589 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.72
10 : USD 0.7126
25 : USD 0.6088
100 : USD 0.4853
250 : USD 0.4756
500 : USD 0.4756
1000 : USD 0.4756

5514 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0679
10 : USD 0.8566
100 : USD 0.6621
500 : USD 0.5636
1000 : USD 0.4485
3500 : USD 0.4319
7000 : USD 0.42
10500 : USD 0.3999
24500 : USD 0.3904

     
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RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
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333 3 VS-5ECH06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 5 A FRED Pt FEATURES Hyperfast recovery time, reduced Q and sof t rr recovery 175 C maximum operating junction temperature Cathode Anode For PFC CRM/CCM, snubber operation Low forward voltage drop Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak SMC (DO-214AB) of 260 C -JESD 47 Designed and qualified according to JEDEC Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS 3D Models State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. PRIMARY CHARACTERISTICS The planar structure and the platinum doped life time control I 5 A F(AV) guarantee the best overall performance, ruggedness and V 600 V R reliability characteristics. V at I 1.2 V F F These devices are intended for use in PFC Boost stage in t typ. 30 ns rr the AC/DC section of SMPS, inverters or as freewheeling diodes. T max. 175 C J Package SMC (DO-214AB) Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over Circuit configuration Single dissipation in the switching element and snubbers. MECHANICAL DATA Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM (1) Average rectified forward current I T = 73 C 5 F(AV) L A Non-repetitive peak surge current I T = 25 C, 10 ms sine pulse 110 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg Note (1) Mounted on PCB with minimum pad size ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 5 A - 1.65 1.95 V F Forward voltage V F I = 5 A, T = 150 C - 1.2 1.4 F J V = V rated - - 3 R R Reverse leakage current I A R T = 150 C, V = V rated - - 100 J R R Junction capacitance C V = 600 V - 7.8 - pF T R Revision: 14-Apr-2021 Document Number: 94779 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-5ECH06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 30 - F F R I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 35 - F F R Reverse recovery time t I = 0.5 A, I = 1 A, I = 0.25 A - - 35 ns rr F R rr T = 25 C -23- J T = 125 C - 38 - J I = 5 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 5.4 - J V = 390 V R T = 25 C - 41 - J Reverse recovery charge Q nC rr T = 125 C - 111 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -55 - 175 C J Stg (1) Thermal resistance, junction to mount R --14 thJM C/W (1) Thermal resistance, junction to ambient R -- 80 thJA 0.24 g Approximate Weight 0.008 oz. Marking device Case style SMC (DO-214AB) 5H6 Note (1) Mounted on PCB with minimum pad size 100 1000 175 C 100 150 C 10 T = 175 C J 10 1 0.1 25 C 1 T = 150 C J 0.01 T = 25 C J 0.001 T = -40 C J 0.1 0.0001 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 14-Apr-2021 Document Number: 94779 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
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