VS-20L15TPbF, VS-20L15T-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 20 A FEATURES 125 C T operation (V < 5 V) J R Base cathode Single diode configuration 2 Optimized for OR-ing applications Ultra low forward voltage drop Guard ring for enhanced ruggedness and long term reliability 1 3 TO-220AC Cathode Anode High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Designed and qualified according to JEDEC-JESD47 Package TO-220AC Halogen-free according to IEC 61249-2-21 definition I 20 A F(AV) (-N3 only) V 15 V R DESCRIPTION V at I See Electrical table F F The Schottky rectifier module has been optimized for I max. 600 mA at 100 C RM ultra low forward voltage drop specifically for the T max. 125 C J OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 Diode variation Single die C junction temperature. Typical applications are in parallel E 10 mJ AS switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 20 A F(AV) V 15 V RRM I t = 5 s sine 700 A FSM p V 19 A , T = 125 C (typical) 0.25 V F pk J T Range - 55 to 125 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-20L15TPbFVS-20L15T-N3UNITS Maximum DC reverse voltage V R 15 15 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 85 C, rectangular waveform 20 F(AV) C See fig. 5 A Maximum peak one cycle 5 s sine or 3 s rect. pulse 700 Following any rated load non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 330 RRM See fig. 7 Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 6 mH 10 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 26-Aug-11 Document Number: 94165 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-20L15TPbF, VS-20L15T-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS 19 A -0.41 T = 25 C J 40 A - 0.52 Forward voltage drop (1) V V FM See fig. 1 19 A 0.25 0.33 T = 125 C J 40 A 0.37 0.50 T = 25 C -10 Reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 100 C - 600 J Threshold voltage V 0.182 V F(TO) T = T max. J J Forward slope resistance r 7.6 m t Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz) 25 C - 2000 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8 - nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction temperature range T - 55 to 125 J C Maximum storage temperature range T - 50 to 150 Stg Maximum thermal resistance, DC operation R 1.5 thJC junction to case See fig. 4 Typical thermal resistance, Mounting surface, smooth and greased R 0.50 C/W thCS case to heatsink (for TO-220) Maximum thermal resistance, DC operation R 40 thJA 2 (for D PAK) junction to ambient 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) Marking device Case style TO-220AC 20L15T Revision: 26-Aug-11 Document Number: 94165 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000