333
3
VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3
www.vishay.com
Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
Base
Glass passivated pellet chip junction
cathode
+
Designed and qualified according to
2
JEDEC -JESD 47
Meets MSL level 1, per J-STD-020,
2
1 LF maximum peak of 245 C
Material categorization: for definitions of compliance
3 13
please see www.vishay.com/doc?99912
Anode -- Anode
2
D PAK (TO-263AB)
APPLICATIONS
PRIMARY CHARACTERISTICS
Output rectification and freewheeling in inverters,
I 20 A
F(AV)
choppers and converters
V 800 V, 1000 V, 1200 V
R
Input rectifications where severe restrictions on
V at I 1.31 V
F F
conducted EMI should be met
I 355 A
FSM
DESCRIPTION
t 95 ns
rr
T max. 150 C
J The VS-20ETF..S-M3 soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
Snap factor 0.6
2
forward voltage drop.
Package D PAK (TO-263AB)
Circuit configuration Single The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
ADDITIONAL RESOURCES
3D Models
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Sinusoidal waveform 20 A
F(AV)
V 800 to 1200 V
RRM
I 355 A
FSM
V 20 A, T = 25 C 1.31 V
F J
t 1 A, 100 A/s 95 ns
rr
T Range -40 to +150 C
J
VOLTAGE RATINGS
V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I
RRM RSM RRM
PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C
V V mA
20ETF08S-M3 800 900
20ETF10S-M3 1000 1100 6
20ETF12S-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I T = 97 C, 180 conduction half sine wave 20
F(AV) C
10 ms sine pulse, rated V applied 300 A
Maximum peak one cycle RRM
I
FSM
non-repetitive surge current
10 ms sine pulse, no voltage reapplied 355
10 ms sine pulse, rated V applied 450
RRM
2 2 2
Maximum I t for fusing I t A s
10 ms sine pulse, no voltage reapplied 635
2 2 2
Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 6350 A s
Revision: 25-Sep-2019 Document Number: 94887
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DDD
D
VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum forward voltage drop V 20 A, T = 25 C 1.31 V
FM J
Forward slope resistance r 11.88 m
t
T = 150 C
J
Threshold voltage V 0.93 V
F(TO)
T = 25 C 0.1
J
Maximum reverse leakage current I V = rated V mA
RM R RRM
T = 150 C 6
J
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
I
FM
Reverse recovery time t 400 ns
rr
I at 20 A t
F pk
rr
Reverse recovery current I 25 A/s 6.1 A
rr
t t
a b
t
25 C
dir
Reverse recovery charge Q 1.7 C
rr
dt Q
rr
Snap factor S Typical 0.6
I
RM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
T , T -40 to +150 C
J Stg
temperature range
Maximum thermal resistance,
R DC operation 0.9
thJC
junction to case
C/W
Maximum thermal resistance,
(1)
R 62
thJA
junction to ambient (PCB mount)
2g
Approximate weight
0.07 oz.
20ETF08S
2
Marking device Case style D PAK (TO-263AB) 20ETF10S
20ETF12S
Note
(1) 2
When mounted on 1" square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W.
For recommended footprint and soldering techniques refer to application note #AN-994
150 150
20ETF.. Series 20ETF.. Series
R (DC) = 0.9 K/W
R (DC) = 0.9 K/W
thJC
thJC
140 140
Conduction period
130 130
Conduction angle
120 120
30
60
60
110 110 90
90
30
120 120
DC
180
180
100 100
0 5 10 15 20 25 025310 15 2050 35
Average Forward Current (A) Average Forward Current (A)
Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics
Revision: 25-Sep-2019 Document Number: 94887
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Maximum Allowable Case
Temperature (C)
Maximum Allowable Case
Temperature (C)