Product Information

VESD05A1-02V-G-18

VESD05A1-02V-G-18 electronic component of Vishay

Datasheet
ESD Suppressors / TVS Diodes ESD PROTECTION DIODE SOD523-e3-G

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 10000
Multiples : 10000
10000 : USD 0.0695
100000 : USD 0.0662
1000000 : USD 0.0649
N/A

Obsolete
0 - WHS 2

MOQ : 10000
Multiples : 10000
10000 : USD 0.0846
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 0.9886
10 : USD 0.7488
100 : USD 0.1872
500 : USD 0.1275
1000 : USD 0.1018
2000 : USD 0.0878
10000 : USD 0.0807
24000 : USD 0.076
50000 : USD 0.0749
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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333 3 VESD05A1-02V (-G-08 / -G-18) www.vishay.com Vishay Semiconductors Single ESD Protection Diode in SOD-523 FEATURES Single-line ESD protection ESD immunity acc. IEC 61000-4-2 30 kV contact discharge 1 2 30 kV air discharge 20278 Typ. capacitance = 130 pF 19344 Leakage current I < 1 A (V = 5 V) R R e3 - Sn Material categorization: MARKING (example only) for definitions of compliance please see www.vishay.com/doc 99912 XY 20279 Bar = cathode marking X = date code Y = type code (see table below) ADDITIONAL RESOURCES 3D Models ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY VESD05A1-02V-G-08 3000 (8 mm tape on 7 reel) 3000 VESD05A1-02V VESD05A1-02V-G-18 10 000 (8 mm tape on 13 reel) 10 000 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL VESD05A1-02V MSL level 1 SOD-523 . 1.35 mg UL 94 V-0 Peak temperature max. 260 C (-G-08 / -G-18) (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VESD05A1-02V PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 s/single shot I 16 A PPM Peak pulse power Acc. IEC 61000-4-5, 8/20 s/single shot P 192 W PP Contact discharge acc. IEC 61000-4-2 10 pulses 30 kV ESD immunity V ESD Air discharge acc. IEC 61000-4-2 10 pulses 30 kV Operating temperature Junction temperature T -40 to +125 C J Storage temperature T -55 to +150 C stg Rev. 1.5, 20-Sep-2019 Document Number: 83369 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D FVESD05A1-02V (-G-08 / -G-18) www.vishay.com Vishay Semiconductors BiAs-MODE (bidirectional asymmetrical protection mode) With the VESD05A1-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V ) the protection diode RWM between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (V ) is defined by the breakthrough voltage (V ) level plus the voltage drop at the series impedance C BR (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (V ) clamps the negative transient close to the ground level. F Due to the different clamping levels in forward and reverse direction the VESD05A1-02V clamping behavior is bidirectional and asymmetrical (BiAs). L1 BiAs Ground 20280 ELECTRICAL CHARACTERISTICS VESD05A1-02V (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 1 lines channel Reverse stand off voltage Max. reverse working voltage V -- 5 V RWM Reverse voltage at I = 1 A V 5- - V R R Reverse current at V = 5 V I - < 0.1 1 A R R Reverse breakdown voltage at I = 1 mA V 66.8 7.5 V R BR at I = 1 A 8/20 s test pulse V -7.2 8.5 V PP C Reverse clamping voltage at I = I = 16 A 8/20 s test pulse V - 10.5 12 V PP PPM C at I = 0.2 A 8/20 s test pulse V - 0.88 1.1 V PP F Forward clamping voltage at I = 1 A 8/20 s test pulse V -1 1.5 V PP F at I = I = 16 A 8/20 s test pulse V -3.2 4.5 V PP PPM F at V = 0 V f = 1 MHz C - 130 150 pF R D Capacitance at V = 2.5 V f = 1 MHz C -76- pF R D Rev. 1.5, 20-Sep-2019 Document Number: 83369 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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